Ghent University Academic Bibliography

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Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization

P. Moens, A. Constant, Arno Stockman (UGent) , J. Franchi and F. Allerstam

(2019) 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). In Proceedings of the International Symposium on Power Semiconductor Devices & ICs p.163-166
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Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

E. Canato, F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman (UGent) , A. Banerjee and P. Moens

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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- Journal Article
- A1
- open access
ESD-failure of E-mode GaN HEMTs : role of device geometry and charge trapping

E. Canato, M. Meneghini, A. Nardo, F. Masin, A. Barbato, M. Barbato, Arno Stockman (UGent) , A. Banerjee, P. Moens, E. Zanoni, et al.

(2019) MICROELECTRONICS RELIABILITY. 100-101.
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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

Arno Stockman (UGent) , A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, et al.

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(1). p.372-377
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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Arno Stockman (UGent) , E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens and Benoit Bakeroot (UGent)

(2018) 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium p.4B.5-1-4B.5-4
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Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

A. Tajalli, Arno Stockman (UGent) , M. Meneghini, S. Mouhoubi, A. Banerjee, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, M. Tack, et al.

(2018) PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). In Proceedings of the International Symposium on Power Semiconductor Devices & ICs (ISPD) p.92-95
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Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

M. Meneghini, A. Tajalli, P. Moens, A. Baneree, Arno Stockman (UGent) , M. Tack, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, et al.

(2017) 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting
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- Conference Paper
- P1
An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies

Benoit Bakeroot (UGent) , Jan Doutreloigne (UGent) , P. Vanmeerbeek and P. Moens

(2007) PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS. p.21-24

Academic Bibliography

Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization

Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

ESD-failure of E-mode GaN HEMTs : role of device geometry and charge trapping

The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies

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