Ghent University Academic Bibliography

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Electrically detected magnetic resonance on 4H-SiC MOSFETs using charge pumping

Jan Lettens (UGent) , Etienne Goovaerts, Henk Vrielinck (UGent) , P. Moens, J. Franchi and S. Cambré

(2022) 29th Benelux EPR Society Meeting, Abstracts.
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- Journal Article
- A1
- open access
Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor : investigation and modeling

F. Masin, C. De Santi, Jan Lettens (UGent) , J. Franchi, M. Domeij, P. Moens, M. Meneghini, G. Meneghesso and E. Zanoni

(2021) JOURNAL OF APPLIED PHYSICS. 130(14).
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Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization

P. Moens, A. Constant, Arno Stockman, J. Franchi and F. Allerstam

(2019) 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). In Proceedings of the International Symposium on Power Semiconductor Devices & ICs p.163-166
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Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

E. Canato, F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee and P. Moens

(2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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- Journal Article
- A1
- open access
ESD-failure of E-mode GaN HEMTs : role of device geometry and charge trapping

E. Canato, M. Meneghini, A. Nardo, F. Masin, A. Barbato, M. Barbato, Arno Stockman, A. Banerjee, P. Moens, E. Zanoni, et al.

(2019) MICROELECTRONICS RELIABILITY. 100-101.
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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

Arno Stockman, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, et al.

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(1). p.372-377
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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Arno Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens and Benoit Bakeroot (UGent)

(2018) 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium p.4B.5-1-4B.5-4
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Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

A. Tajalli, Arno Stockman, M. Meneghini, S. Mouhoubi, A. Banerjee, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, M. Tack, et al.

(2018) PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). In Proceedings of the International Symposium on Power Semiconductor Devices & ICs (ISPD) p.92-95
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Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

M. Meneghini, A. Tajalli, P. Moens, A. Baneree, Arno Stockman, M. Tack, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, et al.

(2017) 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting
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- Conference Paper
- P1
An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies

Benoit Bakeroot (UGent) , Jan Doutreloigne (UGent) , P. Vanmeerbeek and P. Moens

(2007) PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS. p.21-24

Academic Bibliography

Electrically detected magnetic resonance on 4H-SiC MOSFETs using charge pumping

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor : investigation and modeling

Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization

Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

ESD-failure of E-mode GaN HEMTs : role of device geometry and charge trapping

The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies

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