Ghent University Academic Bibliography

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Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

M. Millesimo, C. Fiegna, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and A. N. Tallarico

(2024) 2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024. In International Reliability Physics Symposium
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P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

A. N. Tallarico, M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi and C. Fiegna

(2024) IEEE ELECTRON DEVICE LETTERS. 45(9). p.1630-1633
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Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress

M. Millesimo, M. Borga, L. Valentini, Benoit Bakeroot (UGent) , N. Posthuma, A. Vohra, S. Decoutere, C. Fiegna and A. N. Tallarico

(2023) IEEE TRANSACTIONS ON ELECTRON DEVICES. 70(10). p.5203-5209
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Gate reliability of p-GaN power HEMTs under pulsed stress condition

M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium p.10B.2-1-10B.2-6
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TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
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The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) IEEE ELECTRON DEVICE LETTERS. 43(11). p.1846-1849
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. Millesimo, N. Posthuma, Benoit Bakeroot (UGent) , M. Borga, S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(1). p.57-63
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High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706

Academic Bibliography

Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress

Gate reliability of p-GaN power HEMTs under pulsed stress condition

TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

High-temperature time-dependent gate breakdown of p-GaN HEMTs

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