Ghent University Academic Bibliography

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Understanding the optical degradation of 845 nm micro-transfer-printed VCSILs for photonic integrated circuits

Michele Zenari, Matteo Buffolo, Mirko Fornasier, Carlo De Santi, Jeroen Goyvaerts, Alexander Grabowski, Johan Gustavsson, Sulakshna Kumari (UGent) , Andim Stassren, Roel Baets (UGent) , et al.

(2023) IEEE JOURNAL OF QUANTUM ELECTRONICS. 59(4).
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Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits

Michele Zenari, Matteo Buffolo, Mirko Fornasier, Carlo De Santi, Jeroen Goyvaerts, Alexander Grabowski, Johan Gustavsson, Sulakshna Kumari (UGent) , Andim Stassen, Roel Baets (UGent) , et al.

(2023) Vertical-cavity surface-emitting lasers XXVII. In Proceedings of SPIE 12439.
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Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs

Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens and Benoit Bakeroot (UGent)

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(2). p.169-175
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Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs

Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot (UGent) , Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, et al.

(2021) MICROMACHINES. 12(4).
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Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot (UGent) , Stefaan Decoutere, Patrick Diehle, Susanne Huebner, Frank Altmann, et al.

(2021) MATERIALS. 14(9).
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Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot (UGent) , Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini

(2020) MATERIALS. 13(21).
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Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors

Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2020) 2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Matteo Borga, Carlo De Santi, S. Stoffels, Benoit Bakeroot (UGent) , Xiangdong Li, M. Zhao, M. Van Hove, S. Decoutere, Gaudenzio Meneghesso, Matteo Meneghini, et al.

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(2). p.595-599
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Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Matteo Borga, Kalparupa Mukherjee, Carlo De Santi, Steve Stoffels, Karen Geens, Shuzhen You, Benoit Bakeroot (UGent) , Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, et al.

(2020) APPLIED PHYSICS EXPRESS. 13(2).
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Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens and Benoit Bakeroot (UGent)

(2019) 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD). In Proceedings of the International Symposium on Power Semiconductor Devices & ICs p.287-290

Academic Bibliography

Understanding the optical degradation of 845 nm micro-transfer-printed VCSILs for photonic integrated circuits

Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits

Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs

Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs

Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors

Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

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