Ghent University Academic Bibliography

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Integration of 650 V GaN power ICs on 200 mm engineered substrates

Xiangdong Li, Karen Geens, Dirk Wellekens, Ming Zhao, Alessandro Magnani, Nooshin Amirifar, Benoit Bakeroot (UGent) , Shuzhen You, Dirk Fahle, Herwig Hahn, et al.

(2020) IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING. 33(4). p.534-538
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Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Tian-Li Wu, Benoit Bakeroot (UGent) , Hu Liang, Niels Posthuma, Shuzhen You, Nicolo Ronchi, Steve Stoffels, Denis Marcon and Stefaan Decoutere

(2017) IEEE ELECTRON DEVICE LETTERS. 38(12). p.1696-1699
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Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Jie Hu, Steve Stoffels, Ming Zhao, Andrea Natale Tallarico, Isabella Rossetto, Matteo Meneghini, Xuanwu Kang, Benoit Bakeroot (UGent) , Denis Marcon, Ben Kaczer, et al.

(2017) IEEE ELECTRON DEVICE LETTERS. 38(3). p.371-374
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Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Tian-Li Wu, Jacopo Franco, Denis Marcon, Brice De Jaeger, Benoit Bakeroot (UGent) , Xuanwu Kang, Steve Stoffels, Marleen Van Hove, Guido Groeseneken and Stefaan Decoutere

(2016) 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors

Tian-Li Wu, Denis Marcon, Shuzhen You, Niels Posthuma, Benoit Bakeroot (UGent) , Steve Stoffels, Marleen Van Hove, Guido Groeseneken and Stefaan Decoutere

(2015) IEEE ELECTRON DEVICE LETTERS. 36(10). p.1001-1003
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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Tian-Li Wu, Denis Marcon, Nicolo Ronchi, Benoit Bakeroot (UGent) , Shuzhen You, Steve Stoffels, Marleen Van Hove, Davide Bisi, Matteo Meneghini and Guido Groeseneken

(2015) SOLID-STATE ELECTRONICS. 103. p.127-130
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- Journal Article
- A1
- open access
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Tian-Li Wu, Denis Marcon, Benoit Bakeroot (UGent) , Brice De Jaeger, HC Lin, Jacopo Franco, Steve Stoffels, Marleen Van Hove, Robin Roelofs, Guido Groeseneken, et al.

(2015) APPLIED PHYSICS LETTERS. 107(9).

Academic Bibliography

Integration of 650 V GaN power ICs on 200 mm engineered substrates

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

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