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Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs
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Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs
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The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate
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Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance