Ghent University Academic Bibliography

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- Journal Article
- A1
Probing nitride thin films in 3-dimensions using a variable energy electron beam

C Trager-Cowan, D McColl, F Sweeney, STF Grimson, JF Treguer, A Mohammed, PG Middleton, SK Manson-Smith, KP O'Donnell, Wim Van der Stricht, et al.

(2000) MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 5(suppl. 1). p.U347-U352
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- Conference Paper
- C3
Probing nitride thin films in 3-dimensions using a variable energy electron beam

C Trager-Cowan, JF Treguer, S Grimson, I Osborne, M Barisonzi, PG Middleton, SK Manson-Smith, A Mohammed, KP O'Donnell, Wim Van Der Stricht, et al.

(1999) UK Nitrides Consortium Conference, 1st, Abstract book.
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- Journal Article
- A1
Probing nitride thin films in 3-dimensions using a variable energy electron beam

C Trager-Cowan, JF Treguer, STF Grimson, I Osborne, M Barisonzi, PG Middleton, SK Manson-Smith, A Mohammed, KP O'Donnell, Wim Van der Stricht, et al.

(1999) Institute of Physics Conference Series. 161. p.91-94
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- Journal Article
- P1
Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence.

C TRAGER-COWAN, PG MIDDLETON, A MOHAMMED, KP O'DONNELL, Wim Van Der Stricht, Ingrid Moerman (UGent) and Piet Demeester (UGent)

(1998) NITRIDE SEMICONDUCTORS. 482. p.715-718
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- Journal Article
- P1
Hexagonal growth hillocks in GaN epilayers.

PG MIDDLETON, C TRAGER COWAN, A MOHAMMED, KP ODONNELL, W VANDERSTRICHT, Ingrid Moerman (UGent) and Piet Demeester (UGent)

(1997) III-V NITRIDES. 449. p.471-476
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- Journal Article
- A1
Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire.

A MOHAMMED, C TRAGER-COWAN, PG MIDDLETON, KP O'DONNELL, W VAN DER STRICHT, Ingrid Moerman (UGent) and Piet Demeester (UGent)

(1997) MICROSCOPY OF SEMICONDUCTING MATERIALS. 157. p.235-238
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- Conference Paper
- C1
Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer

C TRAGER-COWAN, A MOHAMMED, SK MANSON-SMITH, KP O'DONNELL, Koen Jacobs and Ingrid Moerman (UGent)

Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France.

Academic Bibliography

Probing nitride thin films in 3-dimensions using a variable energy electron beam

Probing nitride thin films in 3-dimensions using a variable energy electron beam

Probing nitride thin films in 3-dimensions using a variable energy electron beam

Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence.

Hexagonal growth hillocks in GaN epilayers.

Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire.

Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer

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