Ghent University Academic Bibliography

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- Journal Article
- A1
Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Paul Clauws (UGent)

(2008) JOURNAL OF APPLIED PHYSICS. 104(2).
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- Conference Paper
- P1
Metal in-diffusion during Fe and co-germanidation of germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Paul Clauws (UGent)

(2008) GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII. 131-133. p.47-52
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- Journal Article
- A1
Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates

C TORREGIANI, Charlotte Van Bockstael, Christophe Detavernier (UGent) , C LAVOIE, A LAUWERS, K MAEX and JA KITTL

(2007) MICROELECTRONIC ENGINEERING. 84(11). p.2533-2536
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- Journal Article
- A1
Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

K OPSOMER, Davy Deduytsche (UGent) , Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , A LAUWERS, K MAEX and C LAVOIE

(2007) APPLIED PHYSICS LETTERS. 90(3).
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- Journal Article
- A1
Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and Paul Clauws (UGent)

(2006) APPLIED PHYSICS LETTERS. 89(20).
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- Journal Article
- A1
Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

E SIMOEN, K OPSOMER, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Stefaan Forment and Paul Clauws (UGent)

(2006) APPLIED PHYSICS LETTERS. 88(18).
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- Journal Article
- A1
A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

K OPSOMER, E SIMOEN, C CLAEYS, K MAEX, Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , Stefaan Forment and Paul Clauws (UGent)

(2006) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 9(4-5). p.554-558
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- Journal Article
- A1
Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) , W VANDERVORST and K MAEX

(2004) MICROELECTRONIC ENGINEERING. 71(3-4). p.252-261
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- Journal Article
- A1
Mixing entropy and the nucleation of silicides: Ni-Pd-Si and Co-Mn-Si ternary systems

Christophe Detavernier (UGent) , XP QU, Roland Vanmeirhaeghe (UGent) , BZ LI and K MAEX

(2003) JOURNAL OF MATERIALS RESEARCH. 18(7). p.1668-1678
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- Conference Paper
- C1
CoSi2 formation using a Ti capping layer-Influence of processing conditions on CoSi2 nucleation

Christophe Detavernier (UGent) , Roland Vanmeirhaeghe (UGent) and K MAEX

(2002) MRS Proc. 670 (Spring Meeting San Francisco 2001), Materials Research Society, Pittsburgh, PA, USA, 2002, K 7.4.1-7.4.6.

Academic Bibliography

Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium

Metal in-diffusion during Fe and co-germanidation of germanium

Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates

Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium

Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

Mixing entropy and the nucleation of silicides: Ni-Pd-Si and Co-Mn-Si ternary systems

CoSi2 formation using a Ti capping layer-Influence of processing conditions on CoSi2 nucleation

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