Ghent University Academic Bibliography

Formation and texture of Y silicides in annealed TiN/Y thin films on Si substrates

Bert Pollefliet, Clement Porret, Alex Merkulov, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2026) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 214.

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Journal Article
A1
open access

Anisotropic crystallization of orthorhombic ScSi on Si(001) substrates

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Olivier Richard, Han Han, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2026) APL MATERIALS. 14(4).

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Understanding and modeling the impact of defects on electrical characteristics of Si/SiGe heterostructures at cryo temperatures

B. Veryser, F. Stampfl, J.M. Gonzalez-Medina, C. Godfrin, B. Raes, K. De Greve, Roger Loo (UGent) , Y. Shimura, L. Panarella, A. Grill, et al.

(2026) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. p.1-9

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Formation and texture of ScSi from Sc thin films deposited on Si substrates

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Olivier Richard, Han Han, Alex Merkulov, Marta Agati, Roger Loo (UGent) , Christophe Detavernier (UGent) , et al.

(2026) JOURNAL OF APPLIED PHYSICS. 140(2).

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Terman method to study threshold voltage hysteresis of Si/SiGe heterostructures at cryogenic temperatures

B. Veryser, F. Stampfl, J.M. Gonzalez-Medina, C. Godfrin, B. Raes, D. Wan, K. De Greve, Roger Loo (UGent) , Y. Shimura, L. Panarella, et al.

(2026) 2026 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2026. In International Reliability Physics Symposium p.1-6

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Towards 100 GHz waveguide Ge/Si avalanche photodiodes for high-speed optical interconnects

Amir Khaled Abdelhamid Mohamed Shahin (UGent) , Conor Coughlan, Hakim Kobbi, Mathias Berciano, Didit Yudistira, Roger Loo (UGent) , Shuchi Kaushik, Patrick Carolan, Marta Agati, Peter Verheyen, et al.

(2026) JOURNAL OF LIGHTWAVE TECHNOLOGY. 44(16). p.6958-6964

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open access

High-performance thermally-robust C-band GeSi FK electro-absorption modulators on 300-mm silicon photonics platform

Dharmander Malik, Minkyu Kim, Hakim Kobbi, Conor Coughlan, Zohauddin Ahmad, Mathias Berciano, Guy Lepage, Roger Loo (UGent) , Huseyin Sar, Swetanshu Bipul, et al.

(2026) OPTICS EXPRESS. 34(11). p.19467-19477

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360 Gbps Ge-on-Si avalanche photodiodes operating in the O- and C-band

Amir Khaled Abdelhamid Mohamed Shahin (UGent) , Conor Coughlan, Cédric Bruynsteen (UGent) , Mathias Berciano, Didit Yudistira, Roger Loo (UGent) , Hakim Kobbi, Leandro Da Silva (UGent) , Nishant Singh (UGent) , Peter Verheyen, et al.

(2026) 2026 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC.

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A Ge/Si photodiode exceeding 110 GHz with 0.9 A/W, low capacitance and operating at -0.5 V for O and C-band applications

Conor Coughlan, Amir Khaled Abdelhamid Mohamed Shahin (UGent) , Mathias Berciano, Hakim Kobbi, Shalini Shalini Jakanadan, Roger Loo (UGent) , Cédric Bruynsteen (UGent) , Jakob Declercq (UGent) , Minkyu Kim, Swetansu Bipul, et al.

(2026) 2026 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC.

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Journal Article
A1
open access

CFET channel stack fabrication by wafer-to-wafer bonding and BESOI donor dismounting

P. Tchoulfian, D. Barge, J.M. Hartmann, S. Kerdilès, V. Larrey, F. Fournel, V. Loup, P. Hauchecorne, A.M. Papon, A. Thouvard, et al.

(2026) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 214.

Academic Bibliography

Formation and texture of Y silicides in annealed TiN/Y thin films on Si substrates

Anisotropic crystallization of orthorhombic ScSi on Si(001) substrates

Understanding and modeling the impact of defects on electrical characteristics of Si/SiGe heterostructures at cryo temperatures

Formation and texture of ScSi from Sc thin films deposited on Si substrates

Terman method to study threshold voltage hysteresis of Si/SiGe heterostructures at cryogenic temperatures

Towards 100 GHz waveguide Ge/Si avalanche photodiodes for high-speed optical interconnects

High-performance thermally-robust C-band GeSi FK electro-absorption modulators on 300-mm silicon photonics platform

360 Gbps Ge-on-Si avalanche photodiodes operating in the O- and C-band

A Ge/Si photodiode exceeding 110 GHz with 0.9 A/W, low capacitance and operating at -0.5 V for O and C-band applications

CFET channel stack fabrication by wafer-to-wafer bonding and BESOI donor dismounting

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