Ghent University Academic Bibliography

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Precise optical characterization of SiGe thin films for next generation transistor metrology

Samira Naghdi, Richard Ciesielski, Roger Loo (UGent) , Janusz Bogdanowicz and Victor Soltwisch

(2025) 40th European Mask and Lithography Conference (EMLC 2025), Abstracts. p.136-139
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- Conference Paper
- C3
- open access
Source/drain and silicides for nanosheet device applications

Clement Porret, Thomas Dursap, Bert Pollefliet, Alex Merkulov and Roger Loo (UGent)

(2025) MAM 2025, Materials for Advanced Metallization, Abstracts.
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Precise optical characterization of SiGe thin films for next generation transistor metrology

Samira Naghdi, Richard Ciesielski, Roger Loo (UGent) , Janusz Bogdanowicz, Victor Soltwisch and Frank Scholze

(2025) 40th European Mask and Lithography Conference (EMLC 2025). In Proceedings of SPIE 13787(137870T).
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Crystallographic defects in orthorhombic ScSi / Si(001) contacts

Bert Pollefliet, Clement Porret, Olivier Richard, Jean-Luc Everaert, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2025) MAM 2025, Materials for Advanced Metallization, Abstracts.
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SiGe:B Source/Drain epitaxy for advanced device applications

T. Dursap, C. Porret, E. Rosseel, A. Akula, A. Pondini, H. Mertens, J. Ganguly, R. Sarkar, N. Horiguchi, R. Langer, et al.

(2025) European Conference on Innovative and Advanced Epitaxy, Abstracts. p.43-43
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Design of a High-Speed Waveguide Ge/Si SACM Avalanche Photodiode

Amir Khaled Abdelhamid Mohamed Shahin (UGent) , Mathias Berciano, Conor Coughlan, Didit Yudistira, Roger Loo (UGent) , Ahmed Kandeel (UGent) , Peter Verheyen, Hakim Kobbi, Maumita Chakrabarti, Dries Van Thourhout (UGent) , et al.

(2025) JOURNAL OF LIGHTWAVE TECHNOLOGY. 43(19). p.9325-9332
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Growth and stability of Pt germanides on Ge and GeSn substrates

G. Magchiels, Davy Deduytsche (UGent) , L. Kotsedi, Roger Loo (UGent) , C. B. Mtshali, I. K. Segola, N. Spettel, K. van Stiphout, A. Vohra, Christophe Detavernier (UGent) , et al.

(2025) ACTA MATERIALIA. 301.
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- Journal Article
- A1
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Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

Roger Loo (UGent) , M. Beggiato, Y. Shimura, N. Rassoul, W. Vanherle, F. Seidel, K. Paulussen, A. Merkulov, M. Ayyad, I. Lee, et al.

(2025) JOURNAL OF APPLIED PHYSICS. 138(5).
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Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium

Thomas Koch, Clement Godfrin, Viktor Adam, Julian Ferrero, Daniel Schroller, Noah Glaeser, Stefan Kubicek, Ruoyu Li, Roger Loo (UGent) , Shana Massar, et al.

(2025) NPJ QUANTUM INFORMATION. 11(1).
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Source/drain epitaxy and contacts for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Keisuke Yamamoto, Paola Favia, et al.

(2025) 22nd International Workshop on Junction Technology 2025 (IWJT). p.47-50

Academic Bibliography

Precise optical characterization of SiGe thin films for next generation transistor metrology

Source/drain and silicides for nanosheet device applications

Precise optical characterization of SiGe thin films for next generation transistor metrology

Crystallographic defects in orthorhombic ScSi / Si(001) contacts

SiGe:B Source/Drain epitaxy for advanced device applications

Design of a High-Speed Waveguide Ge/Si SACM Avalanche Photodiode

Growth and stability of Pt germanides on Ge and GeSn substrates

Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium

Source/drain epitaxy and contacts for CFET applications

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