Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: author="Lenci, S" or (type any "bookEditor issueEditor" and editor="Lenci, S") Add to list Journal Article A1 Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers J Hu, S Stoffels, S Lenci, SZ You, Benoit Bakeroot (UGent) , N Ronchi, R Venegas, G Groeseneken and S Decoutere (2016) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 213(5). p.1229-1235 Add to list Journal Article A1 Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate J Hu, S Stoffels, S Lenci, Benoit Bakeroot (UGent) , B De Jaeger, M Van Hove, N Ronchi, R Venegas, H Liang, M Zhao, et al. (2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(3). p.997-1004 Add to list Conference Paper P1 Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance P Srivastava, H Oprins, M Van Hove, J Das, PE Malinowski, Benoit Bakeroot (UGent) , D Marcon, D Visalli, X Kang, S Lenci, et al. (2011) 2011 IEEE International electron devices meeting (IEDM).