Ghent University Academic Bibliography

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Low temperature SiGe:B source/drain epitaxy for CFET applications

Thomas Dursap, Clement Porret, Alex Merkulov, Paola Favia, Robert Langer, Min-Soo Kim, Naoto Horiguchi and Roger Loo (UGent)

(2025) Joint ICSI/ISTDM 2025 Conference.
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- Conference Paper
- C1
- open access
Source/drain epitaxy and contacts for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Keisuke Yamamoto, Paola Favia, et al.

(2025) 22nd International Workshop on Junction Technology 2025 (IWJT). p.47-50
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- Conference Paper
- C3
- open access
Source/drain epitaxy and contact silicides for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Olivier Richard, Paola Favia, et al.

(2025) ECS Meeting Abstracts. MA2025-02(36). p.1741-1741
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Single-photon source monolithically integrated on a 300 mm silicon wafer using III-V nano-ridge engineering

Davide Colucci (UGent) , Ulrich Pfister, Reynald Alcotte, Peter Swekis, Michiel De Maeyer (UGent) , Zhongtao Ouyang (UGent) , Tom Vandekerckhove (UGent) , Yves Mols, Robert Langer, Michael Jetter, et al.

(2025) ACS PHOTONICS. 12(7). p.3626-3634
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- C3
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Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , Clement Porret, Erik Rosseel, Anjani Akula, Yosuke Shimura, Thomas Dursap, Andriy Hikavyy, Hans Mertens, Naoto Horiguchi and Robert Langer

(2024) ECS Meeting Abstracts.
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- Conference Paper
New single photon source device concept based on GaAs nano-ridge engineering on silicon

Davide Colucci (UGent) , Reynald Alcotte, Peter Swekis, Yves Mols, Tom Vandekerckhove (UGent) , Joris Van Campenhout, Robert Langer, Geoffrey Pourtois, Dries Van Thourhout (UGent) and Bernardette Kunert

(2024) CLEO 2024.
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- Journal Article
- A2
- open access
Source/drain epitaxy for nanosheet-based CFET devices

Erik Rosseel, Clement Porret, Thomas Dursap, Roger Loo (UGent) , Hans Mertens, Jishnu Ganguly, Ritam Sarkar, Camila Cavalcante, Olivier Richard, Jef Geypen, et al.

(2024) ECS TRANSACTIONS. 114(2). p.29-36
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- Journal Article
- A2
- open access
Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , Anjani Akula, Yosuke Shimura, Clement Porret, Erik Rosseel, Thomas Dursap, Andriy Yakovitch Hikavyy, Matteo Beggiato, Janusz Bogdanowicz, Alex Merkulov, et al.

(2024) ECS TRANSACTIONS. 114(2). p.15-28
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Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering

Davide Colucci (UGent) , Marina Baryshnikova, Yuting Shi, Yves Mols, Muhammad Muneeb (UGent) , Yannick De Koninck (UGent) , Didit Yudistira, Marianna Pantouvaki, Joris Van Campenhout, Robert Langer, et al.

(2022) OPTICS EXPRESS. 30(8). p.13510-13521
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Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates

Yuting Shi, Lisa C. Kreuzer, Nils C. Gerhardt, Marianna Pantouvaki, Joris Van Campenhout, Marina Baryshnikova, Robert Langer, Dries Van Thourhout (UGent) and Bernardette Kunert

(2020) JOURNAL OF APPLIED PHYSICS. 127(10).

Academic Bibliography

Low temperature SiGe:B source/drain epitaxy for CFET applications

Source/drain epitaxy and contacts for CFET applications

Source/drain epitaxy and contact silicides for CFET applications

Single-photon source monolithically integrated on a 300 mm silicon wafer using III-V nano-ridge engineering

Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

New single photon source device concept based on GaAs nano-ridge engineering on silicon

Source/drain epitaxy for nanosheet-based CFET devices

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering

Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates

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