Ghent University Academic Bibliography

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Low temperature SiGe:B source/drain epitaxy for CFET applications

T. Dursap, C. Porret, A. Merkulov, P. Favia, R. Langer, M.-S. Kim, N. Hiroguchi and Roger Loo (UGent)

(2025) 16th International workshop on New Group IV Semiconductor Nanoelectronics, Abstracts. p.11-12
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SiGe:B Source/Drain epitaxy for advanced device applications

T. Dursap, C. Porret, E. Rosseel, A. Akula, A. Pondini, H. Mertens, J. Ganguly, R. Sarkar, N. Horiguchi, R. Langer, et al.

(2025) European Conference on Innovative and Advanced Epitaxy, Abstracts. p.43-43
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- Miscellaneous
JST / ASPIRE project versatile quantum engineering of group-IV alloy materials for semiconductor heterogeneous integrated devices : Imec’s involvement

Roger Loo (UGent) , Y. Shimura, H. Kuwazuru, K. Yamamoto, D. Wang, C. Porret, T. Dursap, A. Akula, D. Schippers, O. Nakatsuka, et al.

(2025) p.1-2
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Epitaxial growth of up to 120x {Si0.8Ge0.2 / Si} bilayers in view of 3D DRAM applications

Roger Loo (UGent) , M. Beggiato, Y. Shimura, N. Rassoul, W. Vanherle, F. Seidel, K. Paulussen, J. Bogdanowicz, A. Merkulov, M. Ayyad, et al.

(2025) Joint ICSI/ISTDM 2025 Conference.
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- Journal Article
- A1
- open access
Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

Roger Loo (UGent) , M. Beggiato, Y. Shimura, N. Rassoul, W. Vanherle, F. Seidel, K. Paulussen, A. Merkulov, M. Ayyad, I. Lee, et al.

(2025) JOURNAL OF APPLIED PHYSICS. 138(5).
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- Journal Article
- A1
- open access
Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , A. Akula, Y. Shimura, C. Porret, E. Rosseel, T. Dursap, A. Y. Hikavyy, M. Beggiato, J. Bogdanowicz, A. Merkulov, et al.

(2025) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 14(1).
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1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates

S. Kumar, K. Geens, A. Vohra, D. Wellekens, D. Cingu, E. Fabris, T. Cosnier, H. Hahn, Benoit Bakeroot (UGent) , N. Posthuma, et al.

(2024) IEEE ELECTRON DEVICE LETTERS. 45(4). p.657-660
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- Conference Paper
- C3
- open access
III/V nano-ridge engineering for device integration on 300 mm silicon

B. Kunert, Davide Colucci (UGent) , M. Baryshnikova, Y. Mols, R. Alcotte, Dries Van Thourhout (UGent) , Cenk Ibrahim Özdemir, Y. De Koninck, N. Kuznetsova, D. Yudistira, et al.

(2021) Compound Semiconductor Week (CSW-2021), Abstracts.
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GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

X. Li, N; Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, et al.

(2019) 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting
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Gaining an edge with nano-ridges

B. Kunert, R. Langer, M. Pantouvaki, J. Van Campenhout and Dries Van Thourhout (UGent)

(2018) COMPOUND SEMICONDUCTOR. 24(5). p.36-41

Academic Bibliography

Low temperature SiGe:B source/drain epitaxy for CFET applications

SiGe:B Source/Drain epitaxy for advanced device applications

JST / ASPIRE project versatile quantum engineering of group-IV alloy materials for semiconductor heterogeneous integrated devices : Imec’s involvement

Epitaxial growth of up to 120x {Si0.8Ge0.2 / Si} bilayers in view of 3D DRAM applications

Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates

III/V nano-ridge engineering for device integration on 300 mm silicon

GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

Gaining an edge with nano-ridges

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