Ghent University Academic Bibliography

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- Journal Article
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Luminescence studies from wires of varying aspects ratio in GaAs-GaAsAs quantum wells.

WE LEITCH, CMS TORRES, D LOOTENS, S THOMS, Peter Van Daele (UGent) , CR STANLEY, Piet Demeester (UGent) and SP BEAUMONT

(1992) SURFACE SCIENCE. 263(1-3). p.622-627
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- Conference Paper
- C1
Wires and dots in GaAs-GaAlAs quantum wells: luminescence intensity studies

C SOTOMAYOR TORR, W LEITCH, D LOOTENS, P WANG, G WILLIAMS, S THOMS, H WALLACE, Peter Van Daele (UGent) , A CULLIS, C STANLEY, et al.

(1992) Nanostructures and Mesoscopic Systems, International Symposium, Proceedings. p.455-461
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- Conference Paper
- C1
Influence of S1CI4 reactive ion etching on the electrical characteristics of GaAs.

D LOOTENS, Paul Clauws (UGent) , Peter Van Daele (UGent) and Piet Demeester (UGent)

(1991) Am. Inst. Phys. Conf. Proc.. 227. p.104-107
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- Conference Paper
- C1
Low temperature annealing of damage induced by SiCL* reactive ion etching.

D LOOTENS, Paul Clauws (UGent) , Peter Van Daele (UGent) and Piet Demeester (UGent)

(1991) Le Vide, Les Couches Minces, suppl., 256, pp. 292-294, 4 figg.
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- Journal Article
- A2
Study of electrical damage in GaAs induced by SiCU reactive ion etching.

D LOOTENS, Peter Van Daele (UGent) , Piet Demeester (UGent) and Paul Clauws (UGent)

(1991) Journal Appl. Phys.. 70. p.221-224
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- Conference Paper
- C1
Fabrication of AIGaAs/GaAs quantum well wires by MOVPE overgrowth of wet etched gratings

Gerrit Vermeire, F VERMAERCKE, D LOOTENS, Peter Van Daele (UGent) and Piet Demeester (UGent)

(1991) Proc. of the Workshop on Heterostructure Technology.
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- Journal Article
- A1
LOW-TEMPERATURE CATHODOLUMINESCENCE STUDIES OF GAAS/ALGAAS QUANTUM DOT STRUCTURES.

GM WILLIAMS, AG CULLIS, CMS TORRES, S THOMS, SP BEAUMONT, CR STANLEY, D LOOTENS and Peter Van Daele (UGent)

(1991) INSTITUTE OF PHYSICS CONFERENCE SERIES. 117. p.695-698

Academic Bibliography

Luminescence studies from wires of varying aspects ratio in GaAs-GaAsAs quantum wells.

Wires and dots in GaAs-GaAlAs quantum wells: luminescence intensity studies

Influence of S1CI4 reactive ion etching on the electrical characteristics of GaAs.

Low temperature annealing of damage induced by SiCL* reactive ion etching.

Study of electrical damage in GaAs induced by SiCU reactive ion etching.

Fabrication of AIGaAs/GaAs quantum well wires by MOVPE overgrowth of wet etched gratings

LOW-TEMPERATURE CATHODOLUMINESCENCE STUDIES OF GAAS/ALGAAS QUANTUM DOT STRUCTURES.

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