Ghent University Academic Bibliography

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Electron barrier height at CuxTe1-x/Al₂O₃ interfaces of conducting bridge memory stacks

VV Afanas'ev, F De Stefano, M Houssa, A Stesmans, L Goux, K Opsomer, Christophe Detavernier (UGent) , JA Kittl and M Jurczak

(2013) THIN SOLID FILMS. 533. p.34-37
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Thermal-stability optimization of Al₂O₃/Cu-Te based conductive-bridging random access memory systems

L Goux, Karl Opsomer (UGent) , A Franquet, G Kar, N Jossart, O Richard, DJ Wouters, R Müller, Christophe Detavernier (UGent) , M Jurczak, et al.

(2013) THIN SOLID FILMS. 533. p.29-33
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- Journal Article
- A1
- open access
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells

L Goux, Karl Opsomer (UGent) , R Degraeve, R Muller, Christophe Detavernier (UGent) , DJ Wouters, M Jurczak, L Altimime and JA Kittl

(2011) APPLIED PHYSICS LETTERS. 99(5).
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Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing

K Tomida, M Popovici, Karl Opsomer (UGent) , N Menou, WC Wang, A Delabie, J Swerts, J Steenbergen, B Kaczer, SV Elshocht, et al.

(2010) IOP CONFERENCE SERIES. MATERIALS SCIENCE AND ENGINEERING. In IOP Conference Series-Materials Science and Engineering 8.
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- Journal Article
- A1
Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

N Menou, M Popovici, S Clima, K Opsomer, W Polspoel, B Kaczer, Geert Rampelberg (UGent) , K Tomida, MA Pawlak, Christophe Detavernier (UGent) , et al.

(2009) JOURNAL OF APPLIED PHYSICS. 106(9).
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High-k dielectrics for future generation memory devices (Invited Paper)

JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, C Adelmann, MA Pawlak, K Tomida, A Rothschild, et al.

(2009) MICROELECTRONIC ENGINEERING. 86(7-9). p.1789-1795
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- Conference Paper
- P1
0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

N Menou, XP Wang, B Kaczer, W Polspoel, M Popovici, K Opsomer, MA Pawlak, Werner Knaepen (UGent) , Christophe Detavernier (UGent) , T Blomberg, et al.

(2008) IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST. In International Electron Devices Meeting p.929-932
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- Journal Article
- A1
Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates

C TORREGIANI, Charlotte Van Bockstael, Christophe Detavernier (UGent) , C LAVOIE, A LAUWERS, K MAEX and JA KITTL

(2007) MICROELECTRONIC ENGINEERING. 84(11). p.2533-2536
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- Journal Article
- A1
Kinetics of Ni3Si2 formation in the Ni2Si-NiSi thin film reaction from in situ measurements

JA KITTL, MA PAWLAK, C TORREGIANI, A LAUWERS, C DEMEURISSE, C VRANCKEN, PP ABSIL, S BIESEMANS, Christophe Detavernier (UGent) , J JORDAN-SWEET, et al.

(2007) APPLIED PHYSICS LETTERS. 91(23).
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- Journal Article
- A1
Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications

JA KITTL, MA PAWLAK, C TORREGIANI, A LAUWERS, C DEMEURISSE, C VRANCKEN, PP ABSIL, S BIESEMANS, C COIA, Christophe Detavernier (UGent) , et al.

(2007) APPLIED PHYSICS LETTERS. 91(17).

Academic Bibliography

Electron barrier height at CuxTe1-x/Al₂O₃ interfaces of conducting bridge memory stacks

Thermal-stability optimization of Al₂O₃/Cu-Te based conductive-bridging random access memory systems

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells

Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing

Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

High-k dielectrics for future generation memory devices (Invited Paper)

0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates

Kinetics of Ni3Si2 formation in the Ni2Si-NiSi thin film reaction from in situ measurements

Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications

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