Show
Sort by
-
Detection of crystalline defects in Si/SiGe superlattices towards 3D-DRAM applications
-
The low-frequency noise behavior of advanced logic and memory devices
-
- Journal Article
- A1
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2
-
- Miscellaneous
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)
-
- Journal Article
- A2
- open access
Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector
-
- Conference Paper
- C1
- open access
Doped and un-doped GeSe2 for OTS : Raman spectroscopy and electrical measurements
-
Influence of the chalcogen element on the filament stability in Culn(Te,Se,S)(2)/Al2O3 filamentary switching devices