Ghent University Academic Bibliography

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The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations

Eiji Kamiyama, Ryo Matsutani, Ryo Suwa, Jan Vanhellemont (UGent) and Koji Sueoka

(2016) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 43. p.209-213
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- Book Chapter
Vacancies in Si and Ge

Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont (UGent)

(2015) Silicon, germanium, and their alloys : growth, defects, impurities, and nanocrystals. p.119-158
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- Journal Article
- A1
- open access
Estimation of the temperature dependent interaction between uncharged point defects in Si

Eiji Kamiyama, Jan Vanhellemont (UGent) and Koji Sueoka

(2015) AIP ADVANCES. 5(1).
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- Journal Article
- A1
- open access
A statistical model describing temperature dependent gettering of Cu in p-type Si

Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont (UGent)

(2015) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 4(7). p.P232-P235
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Intrinsic point defect behavior close to silicon melt/solid interface

Jan Vanhellemont (UGent) , Eiji Kamiyama, Kozo Nakamura and Koji Sueoka

(2015) Semiconductor Technology International Conference (CSTIC).
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Stress and doping impact on intrinsic point defects in silicon and germanium

Jan Vanhellemont (UGent) , Eiji Kamiyama and Koji Sueoka

(2014) AIP Conference Proceedings. In AIP Conference Proceedings 1583. p.8-12
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Surface-induced charge at the Ge (001) surface and its interaction with self-interstitials

Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont (UGent)

(2014) AIP Conference Proceedings. In AIP Conference Proceedings 1583. p.60-63
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Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

Koji Sueoka, Eiji Kamiyama and Jan Vanhellemont (UGent)

(2014) 2014 ECS and SMEQ Joint international meeting.
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An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si

Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont (UGent)

(2014) PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 251(11). p.2185-2188
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Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt

Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont (UGent)

(2014) Physica Status Solidi C-Current Topics in Solid State Physics. In Physica Status Solidi C-Current Topics in Solid State Physics 11(1). p.85-88

Academic Bibliography

The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations

Vacancies in Si and Ge

Estimation of the temperature dependent interaction between uncharged point defects in Si

A statistical model describing temperature dependent gettering of Cu in p-type Si

Intrinsic point defect behavior close to silicon melt/solid interface

Stress and doping impact on intrinsic point defects in silicon and germanium

Surface-induced charge at the Ge (001) surface and its interaction with self-interstitials

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si

Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt

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