Ghent University Academic Bibliography

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Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

J Hu, S Stoffels, S Lenci, SZ You, Benoit Bakeroot (UGent) , N Ronchi, R Venegas, G Groeseneken and S Decoutere

(2016) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 213(5). p.1229-1235
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Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

J Hu, S Stoffels, S Lenci, Benoit Bakeroot (UGent) , B De Jaeger, M Van Hove, N Ronchi, R Venegas, H Liang, M Zhao, et al.

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(3). p.997-1004
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- Conference Paper
- C3
MYCN transcriptionally represses CD9 to trigger an invasion-metastasis cascade in neuroblastoma

H Deubzer, J Fabian, D Opitz, K Althoff, M Lodrini, K Astrahantseff, B Hero, R Volland, Anneleen Beckers (UGent) , Katleen De Preter (UGent) , et al.

(2015) Pediatr. Blood Cancer. In PEDIATRIC BLOOD & CANCER 62(suppl. 4). p.S150-S150
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On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Benoit Bakeroot (UGent) , S You, T-L Wu, J Hu, M Van Hove, B De Jaeger, K Geens, S Stoffels and S Decoutere

(2014) JOURNAL OF APPLIED PHYSICS. 116(13).
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- Journal Article
- A1
Influence of toroidal and vertical magnetic fields on Ion Cyclotron Wall Conditioning in tokamaks

A Lyssoivan, G Sergienko, V Rohde, V Philipps, G van Wassenhove, M Vervier, V Bobkov, J Harhausen, R Koch, Jean-Marie Noterdaeme (UGent) , et al.

(2009) JOURNAL OF NUCLEAR MATERIALS. 390-91. p.907-910
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ICRF wall conditioning: present status and developments for future superconducting fusion machines

A Lyssoivan, R Koch, Jean-Marie Noterdaeme (UGent) , V Philipps, D Van Eester, M Vervier, V Rohde, V Bobkov, G Sergienko, E de la Cal, et al.

(2009) AIP Conference Proceedings. In AIP Conference Proceedings 1187. p.165-172
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- Journal Article
- A1
THE FRAMELESS GYNEFIX(R) INTRAUTERINE IMPLANT - A MAJOR IMPROVEMENT IN EFFICACY, EXPULSION AND TOLERANCE.

H VANKETS, M VRIJENS, Y VANTRAPPEN, W DELBARGE, H VANDERPAS, Marleen Temmerman (UGent) , Herman Depypere (UGent) , I BATAR, P BARRI, F MARTINEZ, et al.

(1995) ADVANCES IN CONTRACEPTION. 11(2). p.131-142

Academic Bibliography

Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

MYCN transcriptionally represses CD9 to trigger an invasion-metastasis cascade in neuroblastoma

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Influence of toroidal and vertical magnetic fields on Ion Cyclotron Wall Conditioning in tokamaks

ICRF wall conditioning: present status and developments for future superconducting fusion machines

THE FRAMELESS GYNEFIX(R) INTRAUTERINE IMPLANT - A MAJOR IMPROVEMENT IN EFFICACY, EXPULSION AND TOLERANCE.

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