Ghent University Academic Bibliography

Your filters: cql: author="Horiguchi, Naoto" or (type any "bookEditor issueEditor" and editor="Horiguchi, Naoto")

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Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , Clement Porret, Erik Rosseel, Anjani Akula, Yosuke Shimura, Thomas Dursap, Andriy Hikavyy, Hans Mertens, Naoto Horiguchi and Robert Langer

(2024) ECS Meeting Abstracts.
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- A1
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Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Xiaoyu Piao, Erik Rosseel, Thierry Conard, Andrea Impagnatiello, Yosuke Shimura, Naoto Horiguchi, et al.

(2024) JAPANESE JOURNAL OF APPLIED PHYSICS. 63(2).
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Source/drain epitaxy for nanosheet-based CFET devices

Erik Rosseel, Clement Porret, Thomas Dursap, Roger Loo (UGent) , Hans Mertens, Jishnu Ganguly, Ritam Sarkar, Camila Cavalcante, Olivier Richard, Jef Geypen, et al.

(2024) ECS TRANSACTIONS. 114(2). p.29-36
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Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , Anjani Akula, Yosuke Shimura, Clement Porret, Erik Rosseel, Thomas Dursap, Andriy Yakovitch Hikavyy, Matteo Beggiato, Janusz Bogdanowicz, Alex Merkulov, et al.

(2024) ECS TRANSACTIONS. 114(2). p.15-28
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NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs

Duan Xie, Eddy Simoen (UGent) , Hiroaki Arimura, Elena Capogreco, Jerome Mitard and Naoto Horiguchi

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(12). p.6985-6990
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The low-frequency noise behavior of advanced logic and memory devices

Eddy Simoen (UGent) , Romain Ritzenthaler, Hans Mertens, Eugenio Dentoni Litta, Naoto Horiguchi, Adrian Vaisman, Nouredine Rassoul, Gouri Sankar Kar and Cor Claeys

(2022) 2022 China Semiconductor Technology International Conference (CSTIC).
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Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs

Duan Xie, Eddy Simoen (UGent) , Haifeng Chen, Hiroaki Arimura and Naoto Horiguchi

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4713-4719
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Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior

Liang He, Pan Zhao, Jiahao Liu, Yahui Su, Hua Chen, Xiaofei Jia, Hiroaki Arimura, Jerome Mitard, Liesbet Witters, Naoto Horiguchi, et al.

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(2). p.1050-1056
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On the low-frequency noise of high-kappa gate stacks : what did we learn?

Eddy Simoen (UGent) , Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Naoto Horiguchi and Cor Claeys

(2018) 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT). p.97-100

Academic Bibliography

Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Source/drain epitaxy for nanosheet-based CFET devices

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs

The low-frequency noise behavior of advanced logic and memory devices

Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs

Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior

On the low-frequency noise of high-kappa gate stacks : what did we learn?

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