Ghent University Academic Bibliography

Your filters: cql: author="Horiguchi, Naoto" or (type any "bookEditor issueEditor" and editor="Horiguchi, Naoto")

Add to list
Low temperature SiGe:B source/drain epitaxy for CFET applications

Thomas Dursap, Clement Porret, Alex Merkulov, Paola Favia, Robert Langer, Min-Soo Kim, Naoto Horiguchi and Roger Loo (UGent)

(2025) Joint ICSI/ISTDM 2025 Conference.
Add to list
- Conference Paper
- C1
- open access
Source/drain epitaxy and contacts for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Keisuke Yamamoto, Paola Favia, et al.

(2025) 22nd International Workshop on Junction Technology 2025 (IWJT). p.47-50
Add to list
- Conference Paper
- C3
- open access
Source/drain epitaxy and contact silicides for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Olivier Richard, Paola Favia, et al.

(2025) ECS Meeting Abstracts. MA2025-02(36). p.1741-1741
Add to list
Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)

Janusz Bogdanowicz, Andrea Mingardi, Vincent Brissonneau, Roger Loo (UGent) , Yosuke Shimura, Anjani Akula, Pallavi P. Gowda, Daisy Zhou, Naoto Horiguchi, Serge Biesemans, et al.

(2025) METROLOGY, INSPECTION, AND PROCESS CONTROL XXXIX. In Proceedings of SPIE 13426.
Add to list
- Conference Paper
- C3
- open access
Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , Clement Porret, Erik Rosseel, Anjani Akula, Yosuke Shimura, Thomas Dursap, Andriy Hikavyy, Hans Mertens, Naoto Horiguchi and Robert Langer

(2024) ECS Meeting Abstracts.
Add to list
- Journal Article
- A1
- open access
Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Xiaoyu Piao, Erik Rosseel, Thierry Conard, Andrea Impagnatiello, Yosuke Shimura, Naoto Horiguchi, et al.

(2024) JAPANESE JOURNAL OF APPLIED PHYSICS. 63(2).
Add to list
- Journal Article
- A2
- open access
Source/drain epitaxy for nanosheet-based CFET devices

Erik Rosseel, Clement Porret, Thomas Dursap, Roger Loo (UGent) , Hans Mertens, Jishnu Ganguly, Ritam Sarkar, Camila Cavalcante, Olivier Richard, Jef Geypen, et al.

(2024) ECS TRANSACTIONS. 114(2). p.29-36
Add to list
- Journal Article
- A2
- open access
Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , Anjani Akula, Yosuke Shimura, Clement Porret, Erik Rosseel, Thomas Dursap, Andriy Yakovitch Hikavyy, Matteo Beggiato, Janusz Bogdanowicz, Alex Merkulov, et al.

(2024) ECS TRANSACTIONS. 114(2). p.15-28
Add to list
- Journal Article
- A1
- open access
NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs

Duan Xie, Eddy Simoen (UGent) , Hiroaki Arimura, Elena Capogreco, Jerome Mitard and Naoto Horiguchi

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(12). p.6985-6990
Add to list
The low-frequency noise behavior of advanced logic and memory devices

Eddy Simoen (UGent) , Romain Ritzenthaler, Hans Mertens, Eugenio Dentoni Litta, Naoto Horiguchi, Adrian Vaisman, Nouredine Rassoul, Gouri Sankar Kar and Cor Claeys

(2022) 2022 China Semiconductor Technology International Conference (CSTIC).

Academic Bibliography

Low temperature SiGe:B source/drain epitaxy for CFET applications

Source/drain epitaxy and contacts for CFET applications

Source/drain epitaxy and contact silicides for CFET applications

Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)

Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Source/drain epitaxy for nanosheet-based CFET devices

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs

The low-frequency noise behavior of advanced logic and memory devices

Contents

Support

Contact