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- Journal Article
- A1
- open access
Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers
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Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging
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- Journal Article
- A1
- open access
Assessing stability of metal tellurides as alternative photomask materials for extreme ultraviolet lithography
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Electrical activity of extended defects in III-V semiconductors
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- Journal Article
- A1
- open access
Ni-Al alloys as alternative EUV mask absorber
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Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
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- Journal Article
- A1
- open access
Electrical properties of extended defects in strain relaxed GeSn
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Study of electron traps associated with oxygen superlattices in n‐type silicon
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A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice
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Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties
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Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on heteroepitaxial GeSn
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Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS
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Crystallization resistance of barium titanate zirconate ultrathin films from aqueous CSD: a study of cause and effect