Ghent University Academic Bibliography

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Your filters: cql: author="Heyns, Marc" or (type exact bookEditor and editor="Heyns, Marc")

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Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers

P.-C. (Brent) Hsu, Eddy Simoen (UGent) , Geert Eneman, Clement Merckling, Yves Mols and Marc Heyns

(2022) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 219(17).
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Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Po-Chun (Brent) Hsu, Han Han, Eddy Simoen (UGent) , Clement Merckling, Geert Eneman, Yves Mols, Nadine Collaert and Marc Heyns

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
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Assessing stability of metal tellurides as alternative photomask materials for extreme ultraviolet lithography

Vu Luong, Vicky Philipsen, Karl Opsomer, Jens Rip, Eric Hendrickx, Marc Heyns, Christophe Detavernier (UGent) , Christian Laubis and Frank Scholze

(2019) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 37(6).
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Electrical activity of extended defects in III-V semiconductors

Eddy Simoen (UGent) , P-C Hsu, Yves Mols, Bernardette Kunert, Robert Langer, Clement Merckling, AliReza Alian, Niamh Waldron, Geert Eneman, Nadine Collaert, et al.

(2019) ECS Transactions. 92(4). p.21-31
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Ni-Al alloys as alternative EUV mask absorber

Vu Luong, Vicky Philipsen, Eric Hendrickx, Karl Opsomer, Christophe Detavernier (UGent) , Christian Laubis, Frank Scholze and Marc Heyns

(2018) APPLIED SCIENCES-BASEL. 8(4).
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Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

Po-Chun (Brent) Hsu, Eddy Simoen (UGent) , Clement Merckling, Geert Eneman, Yves Mols, AliReza Alian, Robert Langer, Nadine Collaert and Marc Heyns

(2018) JOURNAL OF APPLIED PHYSICS. 124(16).
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Electrical properties of extended defects in strain relaxed GeSn

Somya Gupta, Eddy Simoen (UGent) , Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) , et al.

(2018) APPLIED PHYSICS LETTERS. 113(2).
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Study of electron traps associated with oxygen superlattices in n‐type silicon

Eddy Simoen (UGent) , Suseendran Jayachandran, Annelies Delabie, Matty Caymax and Marc Heyns

(2017) PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 14(12).
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A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

Eddy Simoen (UGent) , Suseendran Jayachandran, Annelies Delabie, Matty Caymax and Marc Heyns

(2017) PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 254(4).
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Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties

Suseendran Jayachandran, Eddy Simoen (UGent) , Koen Martens, Johan Meersschaut, Hugo Bender, Matty Caymax, Wilfried Vandervorst, Marc Heyns and Annelies Delabie

(2016) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 5(7). p.P396-P403
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Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on heteroepitaxial GeSn

Somya Gupta, Eddy Simoen (UGent) , Roger Loo, Oreste Madia, Dennis Lin, Clement Merckling, Yosuke Shimura, Thierry Conard, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) , et al.

(2016) ACS APPLIED MATERIALS & INTERFACES. 8(21). p.13181-13186
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Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS

Somya Gupta, Eddy Simoen, Henk Vrielinck (UGent) , Clement Merckling, Benjamin Vincent, Federica Gencarelli, Roger Loo and Marc Heyns

(2013) ECS Transactions. 53(1). p.251-258
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Crystallization resistance of barium titanate zirconate ultrathin films from aqueous CSD: a study of cause and effect

An Hardy, Sven Van Elshocht, Werner Knaepen (UGent) , Jan D'Haen, Thierry Conard, Bert Brijs, Wilfred Vandervorst, Geoffrey Pourtois, Jorge Kittl, Christophe Detavernier (UGent) , et al.

(2009) JOURNAL OF MATERIALS CHEMISTRY. 19(8). p.1115-1122

Academic Bibliography

Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers

Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Assessing stability of metal tellurides as alternative photomask materials for extreme ultraviolet lithography

Electrical activity of extended defects in III-V semiconductors

Ni-Al alloys as alternative EUV mask absorber

Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

Electrical properties of extended defects in strain relaxed GeSn

Study of electron traps associated with oxygen superlattices in n‐type silicon

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties

Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on heteroepitaxial GeSn

Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS

Crystallization resistance of barium titanate zirconate ultrathin films from aqueous CSD: a study of cause and effect

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