Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Save this search Download search results Subscribe to news feed Your filters: cql: author="Heyns, M" or (type any "bookEditor issueEditor" and editor="Heyns, M") Add to list Conference Paper P1 open access Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction PC (Brent) Hsu, Eddy Simoen (UGent) , G Eneman, C Merckling, A Alian, R Langer, N Collaert and M Heyns (2019) Journal of Physics : Conference Series. 1190. Add to list Journal Article A1 Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra S Gupta, Eddy Simoen (UGent) , R Loo, Q Smets, AS Verhulst, Johan Lauwaert (UGent) , Henk Vrielinck (UGent) and M Heyns (2018) APPLIED PHYSICS LETTERS. 113(23). Add to list Conference Paper P1 Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon Eddy Simoen (UGent) , S Jayachandran, A Delabie, M Caymax and M Heyns (2016) Physica Status Solidi C-Current Topics in Solid State Physics. 13(10-12). p.718-723 Add to list Journal Article A1 Deep levels in silicon-oxygen superlattices Eddy Simoen (UGent) , S Jayachandran, A Delabie, M Caymax and M Heyns (2016) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 31(2). Add to list Conference Paper C3 Study of defects in In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction diodes for characterizing trap assisted tunneling S Gupta, Eddy Simoen (UGent) , SE Kazzi, Q Smets, A AliReza, R Rooyackers, A Vandooren, A Verhulst, A Thean, Henk Vrielinck (UGent) , et al. (2015) GADEST, Abstracts.