Ghent University Academic Bibliography

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3D-DRAM Si/SiGe superlattices : inspection strategies and evaluation

Matteo Beggiato, Roger Loo (UGent) , Sun Wei, Alain Moussa, Gerhard Bast, Kaoru Fukaya, Dorin Cerbu, Nachiketa Janardan, Konstantin Chirko, Han Han, et al.

(2025) METROLOGY, INSPECTION, AND PROCESS CONTROL XXXIX. In Proceedings of SPIE 13426.
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Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth

Yuji Yamamoto, Wei-Chen Wen, Markus Andreas Schubert, Agnieszka Anna Corley-Wiciak, Sho Sugawa, Yuta Ito, Ryo Yokogawa, Han Han, Roger Loo (UGent) , Atsushi Ogura, et al.

(2024) JAPANESE JOURNAL OF APPLIED PHYSICS. 63(2).
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Compressively strained epitaxial Ge layers for quantum computing applications

Yosuke Shimura, Clement Godfrin, Andriy Hikavyy, Roy Li, Juan Aguilera, Georgios Katsaros, Paola Favia, Han Han, Danny Wan, Kristiaan De Greve, et al.

(2024) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 174.
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Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger Loo (UGent) , Anjani Akula, Yosuke Shimura, Clement Porret, Erik Rosseel, Thomas Dursap, Andriy Yakovitch Hikavyy, Matteo Beggiato, Janusz Bogdanowicz, Alex Merkulov, et al.

(2024) ECS TRANSACTIONS. 114(2). p.15-28
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Lateral selective epitaxial SiGe growth for locally dislocation-free virtual substrate fabrication

Yuji Yamamoto, Wei-Chen Wen, Markus Andreas Schubert, Agnieszka Anna Corley-Wiciak, Sho Sugawa, Yuta Ito, Ryo Yokogawa, Han Han, Roger Loo (UGent) , Atsushi Ogura, et al.

(2023) 14th International workshop on New Group IV Semiconductor Nanoelectronics, Proceedings.
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Epitaxial SiGe/Si multi-stacks for complementary FET devices

Roger Loo (UGent) , Anjani Akula, Clement Porret, Dong Wang, Keisuke Yamamoto, Tamás Sipőcz, Árpád Kerekes, Alex Merkulov, Mustafa Ayyad, Han Han, et al.

(2023) 14th International workshop on New Group IV Semiconductor Nanoelectronics, Proceedings.
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Nano-ridge engineering of GaSb for the integration of InAs/GaSb heterostructures on 300 mm (001) Si

Marina Baryshnikova, Yves Mols, Yoshiyuki Ishii, Reynald Alcotte, Han Han, Thomas Hantschel, Olivier Richard, Marianna Pantouvaki, Joris Van Campenhout, Dries Van Thourhout (UGent) , et al.

(2020) CRYSTALS. 10(4).
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Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Po-Chun (Brent) Hsu, Han Han, Eddy Simoen (UGent) , Clement Merckling, Geert Eneman, Yves Mols, Nadine Collaert and Marc Heyns

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).

Academic Bibliography

3D-DRAM Si/SiGe superlattices : inspection strategies and evaluation

Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth

Compressively strained epitaxial Ge layers for quantum computing applications

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Lateral selective epitaxial SiGe growth for locally dislocation-free virtual substrate fabrication

Epitaxial SiGe/Si multi-stacks for complementary FET devices

Nano-ridge engineering of GaSb for the integration of InAs/GaSb heterostructures on 300 mm (001) Si

Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

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