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Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics
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Reliability of p-GaN gate HEMTs in reverse conduction
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- Journal Article
- A1
- open access
Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization
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Integration of 650 V GaN power ICs on 200 mm engineered substrates
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Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
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Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates
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Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
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- Journal Article
- A1
- open access
Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2
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Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination
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Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs