Ghent University Academic Bibliography

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Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Xiangdong Li, Niels Posthuma, Benoit Bakeroot (UGent) , Hu Liang, Shuzhen You, Zhicheng Wu, Ming Zhao, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON POWER ELECTRONICS. 36(5). p.4927-4930
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Reliability of p-GaN gate HEMTs in reverse conduction

Deepthi Cingu, Xiangdong Li, Benoit Bakeroot (UGent) , Nooshin Amirifar, Karen Geens, Kristof J. P. Jacobs, Ming Zhao, Shuzhen You, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(2). p.645-652
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- Journal Article
- A1
- open access
Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Xiangdong Li, Benoit Bakeroot (UGent) , Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, Guido Groeseneken and Stefaan Decoutere

(2020) IEEE ELECTRON DEVICE LETTERS. 41(4). p.577-580
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Integration of 650 V GaN power ICs on 200 mm engineered substrates

Xiangdong Li, Karen Geens, Dirk Wellekens, Ming Zhao, Alessandro Magnani, Nooshin Amirifar, Benoit Bakeroot (UGent) , Shuzhen You, Dirk Fahle, Herwig Hahn, et al.

(2020) IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING. 33(4). p.534-538
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Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI

Xiangdong Li, Ming Zhao, Benoit Bakeroot (UGent) , Karen Geens, Weiming Guo, Shuzhen You, Steve Stoffels, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, et al.

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(1). p.553-560
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Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates

Xiangdong Li, Marleen Van Hove, Ming Zhao, Benoit Bakeroot (UGent) , Shuzhen You, Guido Groeseneken and Stefaan Decoutere

(2018) IEEE TRANSACTIONS ON ELECTRON DEVICES. 65(5). p.1721-1727
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Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Jie Hu, Steve Stoffels, Ming Zhao, Andrea Natale Tallarico, Isabella Rossetto, Matteo Meneghini, Xuanwu Kang, Benoit Bakeroot (UGent) , Denis Marcon, Ben Kaczer, et al.

(2017) IEEE ELECTRON DEVICE LETTERS. 38(3). p.371-374
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- Journal Article
- A1
- open access
Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2

Bart F Vermeulen, Jackson Wu, Johan Swerts, Sebastien Couet, Iuliana P Radu, Guido Groeseneken, Christophe Detavernier (UGent) , Johanna K Jochum, Margriet Van Bael, Kristiaan Temst, et al.

(2017) AIP ADVANCES. 7(5).
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Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Brice De Jaeger, Shuzen You, Benoit Bakeroot (UGent) , Guido Groeseneken and Stefaan Decoutere

(2016) 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS).
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Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Tian-Li Wu, Jacopo Franco, Denis Marcon, Brice De Jaeger, Benoit Bakeroot (UGent) , Xuanwu Kang, Steve Stoffels, Marleen Van Hove, Guido Groeseneken and Stefaan Decoutere

(2016) 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium

Academic Bibliography

Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Reliability of p-GaN gate HEMTs in reverse conduction

Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Integration of 650 V GaN power ICs on 200 mm engineered substrates

Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI

Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates

Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2

Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

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