Ghent University Academic Bibliography

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Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

TL Wu, J Franco, D Marcon, B De Jaeger, Benoit Bakeroot (UGent) , S Stoffels, M Van Hove, G Groeseneken and S Decoutere

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(5). p.1853-1860
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Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

J Hu, S Stoffels, S Lenci, SZ You, Benoit Bakeroot (UGent) , N Ronchi, R Venegas, G Groeseneken and S Decoutere

(2016) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 213(5). p.1229-1235
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Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

J Hu, S Stoffels, S Lenci, Benoit Bakeroot (UGent) , B De Jaeger, M Van Hove, N Ronchi, R Venegas, H Liang, M Zhao, et al.

(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(3). p.997-1004
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Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Jie Hu, Steve Stoffels, Silvia Lenci, Benoit Bakeroot (UGent) , R Venegas, G Groeseneken and S Decoutere

(2015) APPLIED PHYSICS LETTERS. 106(8).
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Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

TL Wu, D Marcon, B De Jaeger, M Van Hove, Benoit Bakeroot (UGent) , S Stoffels, G Groeseneken and S Decoutere

(2015) International Reliability Physics Symposium. In International Reliability Physics Symposium
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The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

TL Wu, D Marcon, B De Jaeger, M Van Hove, B Bakeroot, DN Lin, S Stoffels, XW Kang, R Roelofs, G Groeseneken, et al.

(2015) Proceedings of the International Symposium on Power Semiconductor Devices & ICs. In Proceedings of the International Symposium on Power Semiconductor Devices & ICs p.225-228

Academic Bibliography

Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

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