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- Journal Article
- A1
- open access
Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements
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- Journal Article
- A1
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2
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- Miscellaneous
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)
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- Journal Article
- A2
- open access
Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector
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- Journal Article
- A1
- open access
Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles
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- Conference Paper
- C1
- open access
Doped and un-doped GeSe2 for OTS : Raman spectroscopy and electrical measurements
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Influence of the chalcogen element on the filament stability in Culn(Te,Se,S)(2)/Al2O3 filamentary switching devices
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Tuning the switching behavior of conductive-bridge resistive memory by the modulation of the cation-supplier alloys
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Study of amorphous Cu-Te-Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices
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Influence of alloying the copper supply layer on the retention of CBRAM