Ghent University Academic Bibliography

Show Sort by

Your filters: cql: author="Goux, L" or (type any "bookEditor issueEditor" and editor="Goux, L")

Add to list
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

P-C Hsu, Eddy Simoen (UGent) , D Lin, A Stesmans, L Goux, R Delhougne and GS Kar

(2019) ECS Transactions. 92(1). p.45-55
Add to list
- Conference Paper
- P1
- open access
Doped GeSe materials for selector applications

Naga Sruti Avasarala, B Govoreanu, K Opsomer, W Devulder, S Clima, Christophe Detavernier (UGent) , Marleen van der Veen, Jan Van Houdt, Marc Henys, L Goux, et al.

(2017) 2017 47th European solid-state device research conference (ESSDERC). In Proceedings of the European Solid-State Device Research Conference p.168-171
Add to list
- Conference Paper
- P1
- open access
Non-filamentary (VMCO) memory : a two- and three-dimensional study on switching and failure modes

U Celano, C Gastaldi, S Subhechha, B Govoreanu, G Donadio, A Franquet, T Ahmad, Christophe Detavernier (UGent) , O Richard, H Bender, et al.

(2017) 2017 IEEE international electron devices meeting (IEDM). In IEEE International Electron Devices Meeting
Add to list
Conductive filaments multiplicity as a variability factor in CBRAM

U Celano, L Goux, A Belmonte, K Opsomer, Christophe Detavernier (UGent) , M Jurczak and W Vandervorst

(2015) International Reliability Physics Symposium. In International Reliability Physics Symposium
Add to list
Electron barrier height at CuxTe1-x/Al₂O₃ interfaces of conducting bridge memory stacks

VV Afanas'ev, F De Stefano, M Houssa, A Stesmans, L Goux, K Opsomer, Christophe Detavernier (UGent) , JA Kittl and M Jurczak

(2013) THIN SOLID FILMS. 533. p.34-37
Add to list
Conductive-AFM tomography for 3D filament observation in resistive switching devices

U Celano, L Goux, A Belmonte, A Schulze, Karl Opsomer (UGent) , Christophe Detavernier (UGent) , O Richard, H Bender, M Jurczak and W Vandervorst

(2013) 2013 IEEE international electron devices meeting (IEDM).
Add to list
Thermal-stability optimization of Al₂O₃/Cu-Te based conductive-bridging random access memory systems

L Goux, Karl Opsomer (UGent) , A Franquet, G Kar, N Jossart, O Richard, DJ Wouters, R Müller, Christophe Detavernier (UGent) , M Jurczak, et al.

(2013) THIN SOLID FILMS. 533. p.29-33
Add to list
Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

L Goux, W Kim, Karl Opsomer (UGent) , A Belmonte, G Kar, F De Stefano, VV Afanas'ev, U Celano, M Houssa, Wouter Devulder (UGent) , et al.

(2013) ECS Transactions. In ECS Transactions 58(7). p.175-180
Add to list
- Journal Article
- A1
- open access
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells

L Goux, Karl Opsomer (UGent) , R Degraeve, R Muller, Christophe Detavernier (UGent) , DJ Wouters, M Jurczak, L Altimime and JA Kittl

(2011) APPLIED PHYSICS LETTERS. 99(5).

Academic Bibliography

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

Doped GeSe materials for selector applications

Non-filamentary (VMCO) memory : a two- and three-dimensional study on switching and failure modes

Conductive filaments multiplicity as a variability factor in CBRAM

Electron barrier height at CuxTe1-x/Al₂O₃ interfaces of conducting bridge memory stacks

Conductive-AFM tomography for 3D filament observation in resistive switching devices

Thermal-stability optimization of Al₂O₃/Cu-Te based conductive-bridging random access memory systems

Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells

Contents

Support

Contact