Ghent University Academic Bibliography

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GaN power devices on 200 mm engineered substrates

Benoit Bakeroot (UGent) , Karen Geens, Sujit Kumar, Herbert De Pauw (UGent) , Matteo Borga, Anurag Vohra, Urmimala Chatterjee and Stefaan Decoutere

(2024) 12th International Workshop on Nitride Semiconductors (IWN 2024), Abstracts.
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1200 V lateral p-GaN HEMTs on engineered polycrystalline AlN substrates

Sujit Kumar, Karen Geens, Anurag Vohra, Dirk Wellekens, Herwig Hahn, Benoit Bakeroot (UGent) , Niels Posthuma and Stefaan Decoutere

(2024) 47th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2024), Abstracts.
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- Journal Article
- A1
- open access
Route toward commercially manufacturable vertical GaN devices

Karen Geens, M. Borga, M. A. Khan, W. Goncalez Filho, A. Vohra, S. Banerjee, K. J. Lee, U. Chatterjee, D. Cingu, Benoit Bakeroot (UGent) , et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(3). p.1488-1493
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Electrical stability of MOS structures with AlON and Al2O3 dielectrics deposited on n-and p-type GaN

Walter Gonçalez Filho (UGent) , Matteo Borga, Karen Geens, Md Arif Khan, Deepthi Cingu, Urmimala Chatterjee, Stefaan Decoutere, Werner Knaepen, Seda Kizir, Panagiota Arnou, et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(9). p.5212-5217
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- Conference Paper
- C3
Design and characterization of p-body layer of vertical GaN devices on engineered substrates

Matteo Borga, Walter Gonçalez Filho (UGent) , Karen Geens, Benoit Bakeroot (UGent) , Hu Liang and Stefaan Decoutere

(2022) International Workshop on Nitride Semiconductors (IWN 2022), Abstracts.
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Reliability of p-GaN gate HEMTs in reverse conduction

Deepthi Cingu, Xiangdong Li, Benoit Bakeroot (UGent) , Nooshin Amirifar, Karen Geens, Kristof J. P. Jacobs, Ming Zhao, Shuzhen You, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(2). p.645-652
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- Journal Article
- A1
- open access
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs

Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot (UGent) , Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, et al.

(2021) MICROMACHINES. 12(4).
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- Journal Article
- A1
- open access
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot (UGent) , Stefaan Decoutere, Patrick Diehle, Susanne Huebner, Frank Altmann, et al.

(2021) MATERIALS. 14(9).
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- Journal Article
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- open access
Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot (UGent) , Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini

(2020) MATERIALS. 13(21).
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Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors

Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2020) 2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium

Academic Bibliography

GaN power devices on 200 mm engineered substrates

1200 V lateral p-GaN HEMTs on engineered polycrystalline AlN substrates

Route toward commercially manufacturable vertical GaN devices

Electrical stability of MOS structures with AlON and Al2O3 dielectrics deposited on n-and p-type GaN

Design and characterization of p-body layer of vertical GaN devices on engineered substrates

Reliability of p-GaN gate HEMTs in reverse conduction

Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs

Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors

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