Ghent University Academic Bibliography

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1200-V dual-gate p-GaN bidirectional switches on 200-mm engineered substrates

Giulio Baratella (UGent) , U. Chatterjee, S. Kumar, M. Borga, K. Geens, A. Vohra, S. Decoutere and Benoit Bakeroot (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(12). p.6574-6579
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1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates

S. Kumar, K. Geens, A. Vohra, D. Wellekens, D. Cingu, E. Fabris, T. Cosnier, H. Hahn, Benoit Bakeroot (UGent) , N. Posthuma, et al.

(2024) IEEE ELECTRON DEVICE LETTERS. 45(4). p.657-660
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Taking GaN to the next level of 100 V to 2000 V and beyond scalability with the revolutionary 200 mm and 300 mm QST® manufacturing platform

C. Basceri, V. Odnoblyudov, C. Kurth, M. Yamada, S. Konishi, M. Kawahara, C.-C. Liao, S. Shen, J. Chiu, K. Geens, et al.

(2024) 2024 International Conference on Compound Semiconductor Manufacturing Technology, Proceedings.
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Using RESURF technique for edge termination of semi-vertical GaN devices

Benoit Bakeroot (UGent) , K. Geens, M. Borga, H. Liang, S. You and S. Decoutere

(2020) 2020 13TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM 2020). In International Conference on Advanced Semiconductor Devices and Microsystems p.1-4
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Exploration of gate trench module for vertical GaN devices

M. Ruzzarin, K. Geens, M. Borga, H. Liang, S. You, Benoit Bakeroot (UGent) , S. Decoutere, C. De Santi, A. Neviani, M. Meneghini, et al.

(2020) MICROELECTRONICS RELIABILITY. 114(SI).
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GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

X. Li, N; Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, et al.

(2019) 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting

Academic Bibliography

1200-V dual-gate p-GaN bidirectional switches on 200-mm engineered substrates

1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates

Taking GaN to the next level of 100 V to 2000 V and beyond scalability with the revolutionary 200 mm and 300 mm QST® manufacturing platform

Using RESURF technique for edge termination of semi-vertical GaN devices

Exploration of gate trench module for vertical GaN devices

GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

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