Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: author="Geens, K." or (type any "bookEditor issueEditor" and editor="Geens, K.") Add to list Journal Article A1 1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates S. Kumar, K. Geens, A. Vohra, D. Wellekens, D. Cingu, E. Fabris, T. Cosnier, H. Hahn, Benoit Bakeroot (UGent) , N. Posthuma, et al. (2024) IEEE ELECTRON DEVICE LETTERS. 45(4). p.657-660 Add to list Conference Paper C1 Taking GaN to the next level of 100 V to 2000 V and beyond scalability with the revolutionary 200 mm and 300 mm QST® manufacturing platform C. Basceri, V. Odnoblyudov, C. Kurth, M. Yamada, S. Konishi, M. Kawahara, C.-C. Liao, S. Shen, J. Chiu, K. Geens, et al. (2024) 2024 International Conference on Compound Semiconductor Manufacturing Technology, Proceedings. Add to list Conference Paper P1 Using RESURF technique for edge termination of semi-vertical GaN devices Benoit Bakeroot (UGent) , K. Geens, M. Borga, H. Liang, S. You and S. Decoutere (2020) 2020 13TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM 2020). In International Conference on Advanced Semiconductor Devices and Microsystems p.1-4 Add to list Journal Article A1 Exploration of gate trench module for vertical GaN devices M. Ruzzarin, K. Geens, M. Borga, H. Liang, S. You, Benoit Bakeroot (UGent) , S. Decoutere, C. De Santi, A. Neviani, M. Meneghini, et al. (2020) MICROELECTRONICS RELIABILITY. 114(SI). Add to list Conference Paper P1 GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion X. Li, N; Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, et al. (2019) 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting