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Reliability of p-GaN gate HEMTs in reverse conduction
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- Journal Article
- A1
- open access
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs
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- Journal Article
- A1
- open access
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization
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Exploration of gate trench module for vertical GaN devices
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- Journal Article
- A1
- open access
Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability
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Integration of 650 V GaN power ICs on 200 mm engineered substrates
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- Journal Article
- A1
- open access
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
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Using RESURF technique for edge termination of semi-vertical GaN devices
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Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors
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GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion