Ghent University Academic Bibliography

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Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

E Gaubas, T Ceponis, D Dobrovolskas, T Malinauskas, D Meskauskaite, S Miasojedovas, J Mickevicius, J Pavlov, V Rumbauskas, Eddy Simoen (UGent) , et al.

(2017) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 32(12).
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Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices

E Gaubas, Eddy Simoen (UGent) and Jan Vanhellemont (UGent)

(2016) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 5(4). p.P3108-P3137
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Study of radiation defect characteristics in Ge doped Si structures

A Uleckas, E Gaubas, LF Makarenko and Jan Vanhellemont (UGent)

(2012) Radiation Interaction with Material and Its Use in Technologies. In Radiation Interaction wtih Material and Its Use in Technologies p.270-273
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Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

E Gaubas, A Uleckas, JM Rafi, J Chen, D Yang and Jan Vanhellemont (UGent)

(2012) PHYSICA B-CONDENSED MATTER. 407(15). p.2998-3001
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Analysis of Auger recombination characteristics in high resistivity Si and Ge

A Uleckas, E Gaubas, T Ceponis, K Zilinskas, R Grigonis, V Sirutkaitis and Jan Vanhellemont (UGent)

(2011) Solid State Phenomena. In Solid State Phenomena 178-179. p.427-432
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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

A Uleckas, E Gaubas, JM Rafi, J Chen, D Yang, H Ohyama, E Simoen and Jan Vanhellemont (UGent)

(2011) Solid State Phenomena. In Solid State Phenomena 178-179. p.347-352
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Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium

E Gaubas, A Uleckas and Jan Vanhellemont (UGent)

(2009) SUPERLATTICES AND MICROSTRUCTURES. 45(4-5). p.256-266
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- Journal Article
- P1
Microwave and infra red light absorption studies of carrier lifetime in silicon and germanium

E GAUBAS and Jan Vanhellemont (UGent)

(2008) GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII. 131-133. p.149-154
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Metal implants-dependent carrier recombination characteristics in Ge

E Gaubas, A Uleckas, Jan Vanhellemont (UGent) and W Geens

(2008) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 11(5-6). p.291-294
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- Journal Article
- A1
Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge

E GAUBAS, A ULECKAS, R GRIGONIS, V SIRUTKAITIS and Jan Vanhellemont (UGent)

(2008) APPLIED PHYSICS LETTERS. 92(22).

Academic Bibliography

Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices

Study of radiation defect characteristics in Ge doped Si structures

Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

Analysis of Auger recombination characteristics in high resistivity Si and Ge

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium

Microwave and infra red light absorption studies of carrier lifetime in silicon and germanium

Metal implants-dependent carrier recombination characteristics in Ge

Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge

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