Ghent University Academic Bibliography

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Wideband measurement system for on-chip ESD waveform characterisation

Guus Colman (UGent) , Johan Bauwelinck (UGent) , R Gillon, A Wieers and Jan Vandewege (UGent)

(2012) ELECTRONICS LETTERS. 48(3). p.147-U28
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An EKV-based high voltage MOSFET model with improved mobility and drift model

Y CHAUHAN, R GILLON, Benoit Bakeroot (UGent) , F KRUMMENACHER, M DECLERCQ and A IONESCU

(2007) Solid-State Electronics. 51(11-12). p.1581-1588
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- Journal Article
- A1
Compact modeling of lateral nonuniform doping in high-voltage MOSFETs

YS CHAUHAN, F KRUMMENACHER, R GILLON, Benoit Bakeroot (UGent) , MJ DECLERCQ and AM IONESCU

(2007) IEEE TRANSACTIONS ON ELECTRON DEVICES. 54(6). p.1527-1539
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- Journal Article
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New method for threshold voltage extraction of high-voltage MOSFETs based on gate-to-drain capacitance measurement

C ANGHEL, Benoit Bakeroot (UGent) , YS CHAUHAN, R GILLON, C MAIER, P MOENS, Jan Doutreloigne (UGent) and AM IONESCU

(2006) IEEE ELECTRON DEVICE LETTERS. 27(7). p.602-604
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- Journal Article
- A1
Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

YS CHAUHAN, C ANGHEL, F KRUMMENACHER, C MAIER, R GILLON, Benoit Bakeroot (UGent) , B DESOETE, S FRERE, AB DESORMEAUX, A SHARMA, et al.

(2006) SOLID-STATE ELECTRONICS. 50(11-12). p.1801-1813
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- Conference Paper
- C1
Electrical characterization of high voltage MOSFETs using MESDRIFT

C ANGHEL, N HEFYENE, Miguel Vermandel (UGent) , Benoit Bakeroot (UGent) , Jan Doutreloigne (UGent) , R GILLON and A IONESCU

(2003) Proceedings of the International Semiconductor Conference. p.257-260
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- Conference Paper
- P1
Electrical characterisation of high voltage MOSFETs using MESDRIFT

C ANGHEL, N HEFYENE, Miguel Vermandel (UGent) , Benoit Bakeroot (UGent) , Jan Doutreloigne (UGent) , R GILLON and AM IONESCU

(2003) 2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS. p.257-260
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- Conference Paper
- P1
Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

N Hefyene, E Vestiel, Benoit Bakeroot (UGent) , C Anghel, S Frere, A Ionescu and R Gillon

(2002) SISPAD 2002 : international conference on simulation of semiconductor processes and devices. p.203-206
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- Conference Paper
- C1
An Experimental Approach for Bias-Dependent Drain Series Resistances Evaluation in Asymmetric HV MOSFETs

N HEFYENE, C ANGHEL, A IONESCU, Miguel Vermandel (UGent) , Benoit Bakeroot (UGent) , Jan Doutreloigne (UGent) , S FRERE and R GILLON

(2001) Proceedings of the European Solid-State Device Research Conference. p.403-406
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Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage

C ANGHEL, N HEFYENE, A IONESCU, Miguel Vermandel (UGent) , Benoit Bakeroot (UGent) , Jan Doutreloigne (UGent) , R GILLON, S FRERE, C MAIER and Y MOURIER

(2001) Proceedings of the European Solid-State Device Research Conference. p.399-402

Academic Bibliography

Wideband measurement system for on-chip ESD waveform characterisation

An EKV-based high voltage MOSFET model with improved mobility and drift model

Compact modeling of lateral nonuniform doping in high-voltage MOSFETs

New method for threshold voltage extraction of high-voltage MOSFETs based on gate-to-drain capacitance measurement

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

Electrical characterization of high voltage MOSFETs using MESDRIFT

Electrical characterisation of high voltage MOSFETs using MESDRIFT

Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

An Experimental Approach for Bias-Dependent Drain Series Resistances Evaluation in Asymmetric HV MOSFETs

Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage

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