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Compressively strained epitaxial Ge layers for quantum computing applications
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High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si
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Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers
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TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
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Seed layer and multistack approaches to reduce leakage in SrTiO3-based metal-insulator-metal capacitors using TiN bottom electrode