Ghent University Academic Bibliography

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Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays

Arne Loenders, Jacques Van Damme, Clement Godfrin, Paola Favia, Jacopo Franco, Thomas Van Caekenberghe, Bart Raes, Gulzat Jaliel, Sylvain Baudot, Luis Francisco Pinotti, et al.

(2026) SCIENCE ADVANCES.
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A novel beam-tilt technique in transmission electron microscopy (TEM) : application for semiconductor use cases

Chu-Ping Yu, Chen Li, Chunhua (Emma) Tang, Dominique Delille, Aidan Arthur Taylor, Paola Favia, Olivier Richard and Roger Loo (UGent)

(2025) Proceedings from the 51st International Symposium for Testing and Failure Analysis Conference (ISTFA 2025). 85212. p.349-356
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Low temperature SiGe:B source/drain epitaxy for CFET applications

Thomas Dursap, Clement Porret, Alex Merkulov, Paola Favia, Robert Langer, Min-Soo Kim, Naoto Horiguchi and Roger Loo (UGent)

(2025) Joint ICSI/ISTDM 2025 Conference.
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- Conference Paper
- C1
- open access
Source/drain epitaxy and contacts for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Keisuke Yamamoto, Paola Favia, et al.

(2025) 22nd International Workshop on Junction Technology 2025 (IWJT). p.47-50
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- Conference Paper
- C3
- open access
Source/drain epitaxy and contact silicides for CFET applications

Clement Porret, Thomas Dursap, Anjani Akula, Erik Rosseel, Bert Pollefliet, Jean-Luc Everaert, Kiroubanand Sankaran, Alex Merkulov, Olivier Richard, Paola Favia, et al.

(2025) ECS Meeting Abstracts. MA2025-02(36). p.1741-1741
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- Journal Article
- A1
- open access
Engineering high Pockels coefficients in thin-film strontium titanate for cryogenic quantum electro-optic applications

Anja Irene Ulrich (UGent) , Kamal Brahim, Andries Boelen, Michiel Debaets (UGent) , Ahmed Khalil, Conglin Sun, Yishu Huang (UGent) , Sandeep Seema Saseendran, Marina Baryshnikova, Paola Favia, et al.

(2025) SCIENCE. 390(6771). p.390-393
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- Journal Article
- A1
- open access
Compressively strained epitaxial Ge layers for quantum computing applications

Yosuke Shimura, Clement Godfrin, Andriy Hikavyy, Roy Li, Juan Aguilera, Georgios Katsaros, Paola Favia, Han Han, Danny Wan, Kristiaan De Greve, et al.

(2024) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 174.
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High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si

Srinivasan Ashwyn Srinivasan, Clement Porret, Ewoud Vissers (UGent) , Paola Favia, Jeroen De Coster, Hugo Bender, Roger Loo, Dries Van Thourhout (UGent) , Joris Van Campenhout and Marianna Pantouvaki

(2020) IEEE JOURNAL OF QUANTUM ELECTRONICS. 56(1).
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Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers

Min-Hsiang Mark Hsu, Dries Van Thourhout (UGent) , Marianna Pantouvaki, Johan Meersschaut, Thierry Conard, Olivier Richard, Hugo Bender, Paola Favia, Maria Vila, Rosalia Cid, et al.

(2017) APPLIED PHYSICS EXPRESS. 10(6). p.1-4
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TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Rudolf Theoderich Bühler, Geert Eneman, Paola Favia, Liesbeth Johanna Witters, Benjamin Vincent, Andriy Hikavyy, Roger Loo, Hugo Bender, Nadine Collaert, Eddy Simoen (UGent) , et al.

(2015) IEEE TRANSACTIONS ON ELECTRON DEVICES. 62(4). p.1079-1084

Academic Bibliography

Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays

A novel beam-tilt technique in transmission electron microscopy (TEM) : application for semiconductor use cases

Low temperature SiGe:B source/drain epitaxy for CFET applications

Source/drain epitaxy and contacts for CFET applications

Source/drain epitaxy and contact silicides for CFET applications

Engineering high Pockels coefficients in thin-film strontium titanate for cryogenic quantum electro-optic applications

Compressively strained epitaxial Ge layers for quantum computing applications

High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si

Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers

TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

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