Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: author="Favero, D." or (type any "bookEditor issueEditor" and editor="Favero, D.") Add to list Conference Paper P1 High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps D. Favero, A. Cavaliere, C. De Santi, M. Borga, Walter Gonçalez Filho (UGent) , K. Geens, Benoit Bakeroot (UGent) , S. Decoutere, G. Meneghesso, E. Zanoni, et al. (2023) 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. In International reliability physics symposium Add to list Conference Paper P1 Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETs D. Favero, C. De Santi, K. Mukherjee, K. Geens, M. Borga, Benoit Bakeroot (UGent) , S. You, S. Decoutere, G. Meneghesso, E. Zanoni, et al. (2022) 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium Add to list Journal Article A1 Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors D. Favero, C. De Santi, K. Mukherjee, M. Borga, K. Geens, U. Chatterjee, Benoit Bakeroot (UGent) , S. Decoutere, F. Rampazzo, G. Meneghesso, et al. (2022) MICROELECTRONICS RELIABILITY. 138.