Ghent University Academic Bibliography

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- Journal Article
- A1
Free carrier mobility in AlGaN/GaN quantum wells

JL Farvacque, Zahia Bougrioua, F Carosella and Ingrid Moerman (UGent)

(2002) JOURNAL OF PHYSICS-CONDENSED MATTER. 14(48). p.13319-13328
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- Conference Paper
- C3
Mobilité dans GaN en présence de parois de dislocations

JL Farvacque, Zahia Bougrioua and Ingrid Moerman (UGent)

(2001) GDR-CNRS 1050 - Semiconducteurs à large bande interdite, Abstracts.
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- Journal Article
- A1
- open access
Free-carrier mobility in GaN in the presence of dislocation walls

JL Farvacque, Zahia Bougrioua and Ingrid Moerman (UGent)

(2001) PHYSICAL REVIEW B. 63(11).
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- Journal Article
- A1
2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE.

Zahia Bougrioua, JL FARVACQUE, Ingrid Moerman (UGent) and F CAROSELLA

(2001) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 228(2). p.625-628
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- Journal Article
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Material optimisation for AlGaN/GaN HFET applications.

Zahia Bougrioua, Ingrid Moerman (UGent) , N SHARMA, RH WALLIS, Jan Cheyns, Koen Jacobs, EJ THRUSH, L CONSIDINE, R BEANLAND, JL FARVACQUE, et al.

(2001) JOURNAL OF CRYSTAL GROWTH. 230(3-4). p.573-578
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- Journal Article
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Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE.

JL FARVACQUE, Zahia Bougrioua, Ingrid Moerman (UGent) , G VAN TENDELOO and O LEBEDEV

(1999) PHYSICA B-CONDENSED MATTER. 274. p.140-143
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- Conference Paper
- C1
Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE.

Zahia Bougrioua, JL FARVACQUE, Ingrid Moerman (UGent) , Piet Demeester (UGent) , JJ HARRIS, K LEE, G VAN TENDELOO, O LEBEDEV and EJ THRUSH

(1999) Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France.
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- Journal Article
- A1
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE.

Zahia Bougrioua, JL FARVACQUE, Ingrid Moerman (UGent) , Piet Demeester (UGent) , JJ HARRIS, K LEE, G VAN TENDELOO, O LEBEDEV and EJ THRUSH

(1999) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 216(1). p.571-576
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Electrical characteristics of n-type GaN grown by LP-MOVPEPresented at the First Arab Congress on Materials Science (ACMS-1), 25-27 October 1999, Sidi Bel Abbès, Algeria, p. 16.

Zahia Bougrioua, JL FARVACQUE, Ingrid Moerman (UGent) and EJ THRUSH

Academic Bibliography

Free carrier mobility in AlGaN/GaN quantum wells

Mobilité dans GaN en présence de parois de dislocations

Free-carrier mobility in GaN in the presence of dislocation walls

2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE.

Material optimisation for AlGaN/GaN HFET applications.

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE.

Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE.

Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE.

Electrical characteristics of n-type GaN grown by LP-MOVPEPresented at the First Arab Congress on Materials Science (ACMS-1), 25-27 October 1999, Sidi Bel Abbès, Algeria, p. 16.

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