Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Download search results Subscribe to news feed Your filters: cql: author="Fabris, Elena" or (type any "bookEditor issueEditor" and editor="Fabris, Elena") Add to list Journal Article A1 open access Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Elena Fabris, Stefaan Decoutere, Jan Doutreloigne (UGent) , Johan Lauwaert (UGent) and Benoit Bakeroot (UGent) (2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(9). p.4817-4823 Add to list Journal Article A1 open access Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent) (2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5949-5955 Add to list Journal Article A1 open access Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent) (2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4563-4569 Add to list Conference Paper P1 Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability S. Stoffels, N. Posthuma, S. Decoutere, Benoit Bakeroot (UGent) , A. N. Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, M. Borga, et al. (2019) 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium