Ghent University Academic Bibliography

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- Conference Paper
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Crystallographic defects in orthorhombic ScSi / Si(001) contacts

Bert Pollefliet, Clement Porret, Olivier Richard, Jean-Luc Everaert, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2025)
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- Conference Paper
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Texture of Orthorhombic ScSi in Annealed TiN / Sc / Si(:P)(001) Contact Stacks

Bert Pollefliet, Clement Porret, Christophe Detavernier (UGent) , Jean-Luc Everaert, Kiroubanand Sankaran, Erik Rosseel, Roger Loo (UGent) , André Vantomme and Clement Merckling

(2024) Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials.
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- Journal Article
- A1
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Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Xiaoyu Piao, Erik Rosseel, Thierry Conard, Andrea Impagnatiello, Yosuke Shimura, Naoto Horiguchi, et al.

(2024) JAPANESE JOURNAL OF APPLIED PHYSICS. 63(2).
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- Conference Paper
- P1
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Si photonic device uniformity improvement using wafer-scale location specific processing

shankar kumar Selvaraja (UGent) , Luis Fernandez, Michaël Vanslembrouck (UGent) , Jean-Luc Everaert, Pieter Dumon (UGent) , Joris Van Campenhout, Wim Bogaerts (UGent) and Philip Absil

(2012) IEEE Photonics Conference 2012, Abstracts. p.725-726
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- PhD Thesis
Een studie van de invloed van temperatuurbehandelingen op de elektrische eigenschappen van magnetron-gesputterde kobaltsilicide-, titaansilicide- en titaannitride-schottkydiodes op GaAs

Jean-Luc Everaert

(1991)

Academic Bibliography

Crystallographic defects in orthorhombic ScSi / Si(001) contacts

Texture of Orthorhombic ScSi in Annealed TiN / Sc / Si(:P)(001) Contact Stacks

Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Si photonic device uniformity improvement using wafer-scale location specific processing

Een studie van de invloed van temperatuurbehandelingen op de elektrische eigenschappen van magnetron-gesputterde kobaltsilicide-, titaansilicide- en titaannitride-schottkydiodes op GaAs

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