Ghent University Academic Bibliography

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Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers

P.-C. (Brent) Hsu, Eddy Simoen (UGent) , Geert Eneman, Clement Merckling, Yves Mols and Marc Heyns

(2022) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 219(17).
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Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Po-Chun (Brent) Hsu, Han Han, Eddy Simoen (UGent) , Clement Merckling, Geert Eneman, Yves Mols, Nadine Collaert and Marc Heyns

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
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Electrical activity of extended defects in III-V semiconductors

Eddy Simoen (UGent) , P-C Hsu, Yves Mols, Bernardette Kunert, Robert Langer, Clement Merckling, AliReza Alian, Niamh Waldron, Geert Eneman, Nadine Collaert, et al.

(2019) ECS Transactions. 92(4). p.21-31
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Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

Po-Chun (Brent) Hsu, Eddy Simoen (UGent) , Clement Merckling, Geert Eneman, Yves Mols, AliReza Alian, Robert Langer, Nadine Collaert and Marc Heyns

(2018) JOURNAL OF APPLIED PHYSICS. 124(16).
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TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Rudolf Theoderich Bühler, Geert Eneman, Paola Favia, Liesbeth Johanna Witters, Benjamin Vincent, Andriy Hikavyy, Roger Loo, Hugo Bender, Nadine Collaert, Eddy Simoen (UGent) , et al.

(2015) IEEE TRANSACTIONS ON ELECTRON DEVICES. 62(4). p.1079-1084
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Defect assessment and leakage control in Ge junctions

Mireia Bargallo-Gonzalez, Eddy Simoen (UGent) , Geert Eneman, B De Jaeger, G Wang, R Loo and Cor Claeys

(2014) MICROELECTRONIC ENGINEERING. 125. p.33-37

Academic Bibliography

Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers

Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Electrical activity of extended defects in III-V semiconductors

Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Defect assessment and leakage control in Ge junctions

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