Ghent University Academic Bibliography

Your filters: cql: author="Devulder, Wouter" or (type any "bookEditor issueEditor" and editor="Devulder, Wouter")

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- Journal Article
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Study of the temperature dependent trap-dominated conduction in GeSe and GeSe2 Ovonic threshold switching selectors

Jonas Keukelier (UGent) , Seppe Van Dyck (UGent) , Wouter Devulder, Karl Opsomer and Christophe Detavernier (UGent)

(2025) JOURNAL OF APPLIED PHYSICS. 138(13).
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- Conference Paper
- C1
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Process insights into 3D-DRAM with vertical bit line and scalable GAA transistor

N. Rassoul, L. A. Labbate, G. Eneman, A. Fantini, R. Ritzenthaler, J. Loyo Prado, Roger Loo (UGent) , Wouter Devulder (UGent) , E. Dupuy, T. Peissker, et al.

(2025) 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
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- Journal Article
- A1
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Study of SiGeAsTe and SiGeAsSe chalcogenide thin films by Raman spectroscopy and understanding of their OTS properties

Jonas Keukelier (UGent) , Wouter Devulder, Stefanie Sergeant, Thomas Nuytten, Johan Meersschaut, Karl Opsomer and Christophe Detavernier (UGent)

(2024) JOURNAL OF NON-CRYSTALLINE SOLIDS. 644.
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Changing the face of phase change memory with Sb2Te3/TiTe2 superlattices

Seppe Van Dyck (UGent) , Kiumars Aryana, Wouter Devulder, Patrick Hopkins, Pieter Geiregat (UGent) and Christophe Detavernier (UGent)

(2023) 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM).
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- Conference Paper
- C3
- open access
The trap-dominated conduction mechanism in Ge-Se selectors, studied at cryogenic temperatures

Seppe Van Dyck (UGent) , Jonas Keukelier (UGent) , Wouter Devulder, Karl Opsomer and Christophe Detavernier (UGent)

(2022) MAM 2022, Materials for Advanced Metallization, Abstracts.
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A combinatorial study of SiGeAsTe thin films for application as an Ovonic threshold switch selector

Wouter Devulder, Daniele Garbin, Sergiu Clima, Gabriele Luca Donadio, Andrea Fantini, Bogdan Govoreanu, Christophe Detavernier (UGent) , Larry Chen, Michael Miller, Ludovic Goux, et al.

(2022) THIN SOLID FILMS. 753.
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- Journal Article
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Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Jonas Keukelier (UGent) , Karl Opsomer, Wouter Devulder, Sergiu Clima, Ludovic Goux, Gouri Sankar Kar and Christophe Detavernier (UGent)

(2021) JOURNAL OF APPLIED PHYSICS. 130(16).
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Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

Jonas Keukelier (UGent) , Karl Opsomer, Thomas Nuytten, Stefanie Sergeant, Wouter Devulder, Sergiu Clima, Ludovic Goux, Gouri Sankar Kar and Christophe Detavernier (UGent)

(2021) JOURNAL OF MATERIALS CHEMISTRY C. 9(1). p.117-126
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- Miscellaneous
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Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)

Jonas Keukelier (UGent) , Karl Opsomer, Thomas Nuytten, Stefanie Sergeant, Wouter Devulder, Sergiu Clima, Ludovic Goux, Gouri Sankar Kar and Christophe Detavernier (UGent)

(2021) JOURNAL OF MATERIALS CHEMISTRY C. 9(2). p.736-736
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- Journal Article
- A2
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Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector

Ali Haider, Shaoren Deng, Wouter Devulder, Jan Willem Maes, Jean-Marc Girard, Gabriel Khalil El Hajjam, Gouri Sankar Kar, Karl Opsomer, Christophe Detavernier (UGent) , Michael Givens, et al.

(2021) MATERIALS ADVANCES. 2(5). p.1635-1643

Academic Bibliography

Study of the temperature dependent trap-dominated conduction in GeSe and GeSe2 Ovonic threshold switching selectors

Process insights into 3D-DRAM with vertical bit line and scalable GAA transistor

Study of SiGeAsTe and SiGeAsSe chalcogenide thin films by Raman spectroscopy and understanding of their OTS properties

Changing the face of phase change memory with Sb2Te3/TiTe2 superlattices

The trap-dominated conduction mechanism in Ge-Se selectors, studied at cryogenic temperatures

A combinatorial study of SiGeAsTe thin films for application as an Ovonic threshold switch selector

Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)

Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector

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