Ghent University Academic Bibliography

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Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

Meiyi Wu, Jean-Francois de Marneffe, Karl Opsomer (UGent) , Christophe Detavernier (UGent) , Annelies Delabie, Philipp Naujok, Oezge Caner, Andy Goodyear, Mike Cooke, Qais Saadeh, et al.

(2021) MICRO AND NANO ENGINEERING. 12.
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Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector

Ali Haider, Shaoren Deng, Wouter Devulder, Jan Willem Maes, Jean-Marc Girard, Gabriel Khalil El Hajjam, Gouri Sankar Kar, Karl Opsomer, Christophe Detavernier (UGent) , Michael Givens, et al.

(2021) MATERIALS ADVANCES. 2(5). p.1635-1643
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Study of electron traps associated with oxygen superlattices in n‐type silicon

Eddy Simoen (UGent) , Suseendran Jayachandran, Annelies Delabie, Matty Caymax and Marc Heyns

(2017) PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 14(12).
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A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

Eddy Simoen (UGent) , Suseendran Jayachandran, Annelies Delabie, Matty Caymax and Marc Heyns

(2017) PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 254(4).
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Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties

Suseendran Jayachandran, Eddy Simoen (UGent) , Koen Martens, Johan Meersschaut, Hugo Bender, Matty Caymax, Wilfried Vandervorst, Marc Heyns and Annelies Delabie

(2016) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 5(7). p.P396-P403
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Germanium surface passivation and atomic layer deposition of high-k dielectrics: a tutorial review on Ge-based MOS capacitors

Qi Xie (UGent) , Shaoren Deng (UGent) , Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yu-Long Jiang, Davy Deduytsche (UGent) and Christophe Detavernier (UGent)

(2012) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 27(7).
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Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma

Qi Xie (UGent) , Davy Deduytsche (UGent) , Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu and Christophe Detavernier (UGent)

(2011) ELECTROCHEMICAL AND SOLID STATE LETTERS. 14(5). p.G20-G22
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TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Qi Xie (UGent) , Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Dennis Lin, Xin-Ping Qu, Yu-Long Jiang, Sven Van den Berghe and Christophe Detavernier (UGent)

(2011) ELECTROCHEMICAL AND SOLID STATE LETTERS. 14(5). p.G27-G30
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Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Shaoren Deng (UGent) , Qi Xie, Davy Deduytsche (UGent) , Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Sven Van den Berghe, Xinping Qu and Christophe Detavernier (UGent)

(2011) APPLIED PHYSICS LETTERS. 99(5).
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High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing

Qi Xie (UGent) , ShaoRen Deng, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, YuLong Jiang, XinPing Qu, Davy Deduytsche (UGent) and Christophe Detavernier (UGent)

(2011) IEEE ELECTRON DEVICE LETTERS. 32(12). p.1656-1658

Academic Bibliography

Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector

Study of electron traps associated with oxygen superlattices in n‐type silicon

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties

Germanium surface passivation and atomic layer deposition of high-k dielectrics: a tutorial review on Ge-based MOS capacitors

Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma

TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing

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