Ghent University Academic Bibliography

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Deep levels in silicon-oxygen superlattices

Eddy Simoen (UGent) , S Jayachandran, A Delabie, M Caymax and M Heyns

(2016) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 31(2).
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Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon

Eddy Simoen (UGent) , S Jayachandran, A Delabie, M Caymax and M Heyns

(2016) Physica Status Solidi C-Current Topics in Solid State Physics. 13(10-12). p.718-723
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- Conference Paper
- P1
- open access
Study of electrically active defects in epitaxial layers on silicon

Eddy Simoen (UGent) , SK Dhayalan, S Jayachandran, S Gupta, F Gencarelli, A Hikavyy, R Loo, E Rosseel, A Delabie, M Caymax, et al.

(2016) 2016 China semiconductor technology international conference (CSTIC).
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Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing

K Tomida, M Popovici, Karl Opsomer (UGent) , N Menou, WC Wang, A Delabie, J Swerts, J Steenbergen, B Kaczer, SV Elshocht, et al.

(2010) IOP CONFERENCE SERIES. MATERIALS SCIENCE AND ENGINEERING. In IOP Conference Series-Materials Science and Engineering 8.
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Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition

M Popovici, A Delabie, S Van Elshocht, S Clima, G Pourtois, L Nyns, K Tomida, N Menou, K Opsomer, J Swerts, et al.

(2009) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 156(10). p.G145-G151
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- Conference Paper
- P1
High-k dielectrics and metal gates for future generation memory devices

Jorge A Kittl, Karl Opsomer, M Popovici, N Menou, Ben Kaczer, XP Wang, C Adelmann, MA Pawlak, K Tomida, Aude Rothschild, et al.

(2009) ECS Transactions. In ECS Transactions 19(1). p.29-40
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High-k dielectrics for future generation memory devices (Invited Paper)

JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, C Adelmann, MA Pawlak, K Tomida, A Rothschild, et al.

(2009) MICROELECTRONIC ENGINEERING. 86(7-9). p.1789-1795
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- Conference Paper
- C3
Semi-empirical and ab initio calculations of the spectroscopic properties of Co(II) coordinated to six-rings in zeolites

An Verberckmoes (UGent) , RA Schoonheydt, A Ceulemans, A Delabie and K Pierloot

(1998)

Academic Bibliography

Deep levels in silicon-oxygen superlattices

Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon

Study of electrically active defects in epitaxial layers on silicon

Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing

Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition

High-k dielectrics and metal gates for future generation memory devices

High-k dielectrics for future generation memory devices (Invited Paper)

Semi-empirical and ab initio calculations of the spectroscopic properties of Co(II) coordinated to six-rings in zeolites

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