Ghent University Academic Bibliography

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ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric

Eliana Acurio, Lionel Trojman, Brice de Jaeger, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2021) 2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Surface-potential-based compact modeling of p-GaN gate HEMTs

Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot (UGent) , Jun Liu and Stefaan Decoutere

(2021) MICROMACHINES. 12(2).
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Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

Po-Chun Hsu, Eddy Simoen (UGent) , Hu Liang, Brice De Jaeger, Benoit Bakeroot (UGent) , Dirk Wellekens and Stefaan Decoutere

(2021) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 218(23).
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Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Xiangdong Li, Niels Posthuma, Benoit Bakeroot (UGent) , Hu Liang, Shuzhen You, Zhicheng Wu, Ming Zhao, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON POWER ELECTRONICS. 36(5). p.4927-4930
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Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Jethro Oroceo Gallardo, Brice De Jaeger, Sachidananda Dash, Shun-Wei Tang, Thanh Nga Tran, Dirk Wellekens, Benoit Bakeroot (UGent) , Stefaan Decoutere and Tian-Li Wu

(2021) 2021 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA). In IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
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Reliability of p-GaN gate HEMTs in reverse conduction

Deepthi Cingu, Xiangdong Li, Benoit Bakeroot (UGent) , Nooshin Amirifar, Karen Geens, Kristof J. P. Jacobs, Ming Zhao, Shuzhen You, Guido Groeseneken and Stefaan Decoutere

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(2). p.645-652
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Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs

Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot (UGent) , Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, et al.

(2021) MICROMACHINES. 12(4).
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Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot (UGent) , Stefaan Decoutere, Patrick Diehle, Susanne Huebner, Frank Altmann, et al.

(2021) MATERIALS. 14(9).
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Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Filip Wach, Michael J. Uren, Benoit Bakeroot (UGent) , Ming Zhao, Stefaan Decoutere and Martin Kuball

(2020) IEEE ELECTRON DEVICE LETTERS. 41(12). p.1754-1757
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Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

Jie Wang, Zhanfei Chen, Shuzhen You, Wenyong Zhou, Benoit Bakeroot (UGent) , Jun Liu, Lingling Sun and Stefaan Decoutere

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(9). p.3564-3567

Academic Bibliography

ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric

Surface-potential-based compact modeling of p-GaN gate HEMTs

Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Reliability of p-GaN gate HEMTs in reverse conduction

Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs

Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

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