Ghent University Academic Bibliography

Your filters: cql: author="Decoutere, Stefaan" or (type any "bookEditor issueEditor" and editor="Decoutere, Stefaan")

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- Journal Article
Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering

Matteo Borga, Niels Posthuma, Anurag Vohra, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2024) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 221(21).
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Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4563-4569
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Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5949-5955
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- Conference Paper
GaN power devices on 200 mm engineered substrates

Benoit Bakeroot (UGent) , Karen Geens, Sujit Kumar, Herbert De Pauw (UGent) , Matteo Borga, Anurag Vohra, Urmimala Chatterjee and Stefaan Decoutere

(2024)
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- Conference Paper
1200 V p-GaN HEMTs on engineered polycrystalline AlN Substrates

Sujit Kumar, Karen Geens, Anurag Vohra, Dirk Wellekens, Herwig Hahn, Benoit Bakeroot (UGent) , Niels Posthuma and Stefaan Decoutere

(2024) 47th Workshop on Compound Semiconductor Devices and Integrated Circuits.
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Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Wei-Syuan Lin, Benoit Bakeroot (UGent) , Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere and Tian-Li Wu

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4874-4878
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- Journal Article
Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Zequan Chen, Michael J. Uren, Peng Huang, Indraneel Sanyal, Matthew D. Smith, Anurag Vohra, Sujit Kumar, Stefaan Decoutere, Benoit Bakeroot (UGent) and Martin Kuball

(2024) APPLIED PHYSICS LETTERS. 125(9).
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- Journal Article
Electrical Stability of MOS Structures With AlON and Al<sub>2</sub>O<sub>3</sub> Dielectrics Deposited on n-and p-Type GaN

Walter Gonçalez Filho (UGent) , Matteo Borga, Karen Geens, Md Arif Khan, Deepthi Cingu, Urmimala Chatterjee, Stefaan Decoutere, Werner Knaepen, Seda Kizir, Panagiota Arnou, et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(9). p.5212-5217
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Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform

Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Urmimala Chatterjee, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2023) 2023 International Semiconductor Conference (CAS). In CAS Proceedings p.143-146
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- Conference Paper
Design and Characterization of p-body Layer of Vertical GaN Devices on Engineered Substrates

Matteo Borga, Walter Gonçalez Filho (UGent) , Karen Geens, Benoit Bakeroot (UGent) , Hu Liang and Stefaan Decoutere

(2022) International Workshop on Nitride Semiconductors (IWN).

Academic Bibliography

Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

GaN power devices on 200 mm engineered substrates

1200 V p-GaN HEMTs on engineered polycrystalline AlN Substrates

Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Electrical Stability of MOS Structures With AlON and Al<sub>2</sub>O<sub>3</sub> Dielectrics Deposited on n-and p-Type GaN

Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform

Design and Characterization of p-body Layer of Vertical GaN Devices on Engineered Substrates

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