Ghent University Academic Bibliography

Your filters: cql: author="Decoutere, Stefaan" or (type any "bookEditor issueEditor" and editor="Decoutere, Stefaan")

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Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Elena Fabris, Stefaan Decoutere, Jan Doutreloigne (UGent) , Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(9). p.4817-4823
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Charge transport in GaN high electron mobility transistor with positive substrate bias

Peng Huang, Matthew D. Smith, Michael J. Uren, Zequan Chen, Benoit Bakeroot (UGent) , Anurag Vohra, Stefaan Decoutere and Martin Kuball

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(7). p.3483-3488
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Enhancing the forward gate bias robustness in p-GaN gate high-electron-mobility transistors through doping profile engineering

Matteo Borga, Niels Posthuma, Anurag Vohra, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2024) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 221(21).
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Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5949-5955
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Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4563-4569
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GaN power devices on 200 mm engineered substrates

Benoit Bakeroot (UGent) , Karen Geens, Sujit Kumar, Herbert De Pauw (UGent) , Matteo Borga, Anurag Vohra, Urmimala Chatterjee and Stefaan Decoutere

(2024) 12th International Workshop on Nitride Semiconductors (IWN 2024), Abstracts.
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1200 V lateral p-GaN HEMTs on engineered polycrystalline AlN substrates

Sujit Kumar, Karen Geens, Anurag Vohra, Dirk Wellekens, Herwig Hahn, Benoit Bakeroot (UGent) , Niels Posthuma and Stefaan Decoutere

(2024) 47th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2024), Abstracts.
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Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Wei-Syuan Lin, Benoit Bakeroot (UGent) , Zhen-Hong Huang, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere and Tian-Li Wu

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4874-4878
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Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Zequan Chen, Michael J. Uren, Peng Huang, Indraneel Sanyal, Matthew D. Smith, Anurag Vohra, Sujit Kumar, Stefaan Decoutere, Benoit Bakeroot (UGent) and Martin Kuball

(2024) APPLIED PHYSICS LETTERS. 125(9).
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Electrical stability of MOS structures with AlON and Al2O3 dielectrics deposited on n-and p-type GaN

Walter Gonçalez Filho (UGent) , Matteo Borga, Karen Geens, Md Arif Khan, Deepthi Cingu, Urmimala Chatterjee, Stefaan Decoutere, Werner Knaepen, Seda Kizir, Panagiota Arnou, et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(9). p.5212-5217

Academic Bibliography

Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Charge transport in GaN high electron mobility transistor with positive substrate bias

Enhancing the forward gate bias robustness in p-GaN gate high-electron-mobility transistors through doping profile engineering

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

GaN power devices on 200 mm engineered substrates

1200 V lateral p-GaN HEMTs on engineered polycrystalline AlN substrates

Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Electrical stability of MOS structures with AlON and Al2O3 dielectrics deposited on n-and p-type GaN

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