Ghent University Academic Bibliography

Your filters: cql: author="Decoutere, S." or (type any "bookEditor issueEditor" and editor="Decoutere, S.")

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- Journal Article
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

M. Millesimo, C. Fiegna, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and A. N. Tallarico

(2024) 2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024.
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- Journal Article
Monolithic 650-V dual-gate p-GaN bidirectional switch

Giulio Baratella (UGent) , U. Chatterjee, O. Syshchyk, M. Borga, E. Fabris, T. Cosnier, Benoit Bakeroot (UGent) and S. Decoutere

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. p.1-6
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- Journal Article
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

A. N. Tallarico, M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi and C. Fiegna

(2024) IEEE ELECTRON DEVICE LETTERS. 45(9). p.1630-1633
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- Journal Article
1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

S. Kumar, K. Geens, A. Vohra, D. Wellekens, D. Cingu, E. Fabris, T. Cosnier, H. Hahn, Benoit Bakeroot (UGent) , N. Posthuma, et al.

(2024) IEEE ELECTRON DEVICE LETTERS. 45(4). p.657-660
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- Conference Paper
Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

C. Basceri, V. Odnoblyudov, C. Kurth, M. Yamada, S. Konishi, M. Kawahara, C.-C. Liao, S. Shen, J. Chiu, K. Geens, et al.

(2024) International Conference on Compound Semiconductor Manufacturing Technology.
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- Journal Article
- A1
- open access
TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. Millesimo, N. Posthuma, Benoit Bakeroot (UGent) , M. Borga, S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(1). p.57-63
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- Journal Article
- A1
- open access
High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706
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Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

A. N. Tallarico, N. E. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna

(2020) MICROELECTRONICS RELIABILITY. 114(SI).
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Using RESURF technique for edge termination of semi-vertical GaN devices

Benoit Bakeroot (UGent) , K. Geens, M. Borga, H. Liang, S. You and S. Decoutere

(2020) 2020 13TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM 2020). In International Conference on Advanced Semiconductor Devices and Microsystems p.1-4

Academic Bibliography

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

Monolithic 650-V dual-gate p-GaN bidirectional switch

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

High-temperature time-dependent gate breakdown of p-GaN HEMTs

Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

Using RESURF technique for edge termination of semi-vertical GaN devices

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