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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs
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High-temperature time-dependent gate breakdown of p-GaN HEMTs
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Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
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Using RESURF technique for edge termination of semi-vertical GaN devices
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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
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Exploration of gate trench module for vertical GaN devices
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Gate reliability of p-GaN HEMT with gate metal retraction
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Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability
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GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion