Ghent University Academic Bibliography

Your filters: cql: author="Decoutere, S." or (type any "bookEditor issueEditor" and editor="Decoutere, S.")

Add to list
- Journal Article
- A1
- open access
1200-V dual-gate p-GaN bidirectional switches on 200-mm engineered substrates

Giulio Baratella (UGent) , U. Chatterjee, S. Kumar, M. Borga, K. Geens, A. Vohra, S. Decoutere and Benoit Bakeroot (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(12). p.6574-6579
Add to list
- Journal Article
- A1
- open access
Monolithic 650-V dual-gate p-GaN bidirectional switch

Giulio Baratella (UGent) , U. Chatterjee, O. Syshchyk, M. Borga, E. Fabris, T. Cosnier, Benoit Bakeroot (UGent) and S. Decoutere

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(11). p.6904-6909
Add to list
Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

M. Millesimo, C. Fiegna, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and A. N. Tallarico

(2024) 2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024. In International Reliability Physics Symposium
Add to list
- Journal Article
- A1
- open access
P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

A. N. Tallarico, M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi and C. Fiegna

(2024) IEEE ELECTRON DEVICE LETTERS. 45(9). p.1630-1633
Add to list
1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates

S. Kumar, K. Geens, A. Vohra, D. Wellekens, D. Cingu, E. Fabris, T. Cosnier, H. Hahn, Benoit Bakeroot (UGent) , N. Posthuma, et al.

(2024) IEEE ELECTRON DEVICE LETTERS. 45(4). p.657-660
Add to list
Taking GaN to the next level of 100 V to 2000 V and beyond scalability with the revolutionary 200 mm and 300 mm QST® manufacturing platform

C. Basceri, V. Odnoblyudov, C. Kurth, M. Yamada, S. Konishi, M. Kawahara, C.-C. Liao, S. Shen, J. Chiu, K. Geens, et al.

(2024) 2024 International Conference on Compound Semiconductor Manufacturing Technology, Proceedings.
Add to list
- Journal Article
- A1
- open access
TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
Add to list
Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. Millesimo, N. Posthuma, Benoit Bakeroot (UGent) , M. Borga, S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(1). p.57-63
Add to list
- Journal Article
- A1
- open access
High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706
Add to list
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

A. N. Tallarico, N. E. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna

(2020) MICROELECTRONICS RELIABILITY. 114(SI).

Academic Bibliography

1200-V dual-gate p-GaN bidirectional switches on 200-mm engineered substrates

Monolithic 650-V dual-gate p-GaN bidirectional switch

Analysis of RTN induced by forward gate stress in GaN HEMTs with a Schottky p-GaN gate

P-GaN gate HEMTs : a solution to improve the high-temperature gate lifetime

1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates

Taking GaN to the next level of 100 V to 2000 V and beyond scalability with the revolutionary 200 mm and 300 mm QST® manufacturing platform

TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

High-temperature time-dependent gate breakdown of p-GaN HEMTs

Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

Contents

Support

Contact