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- Conference Paper
- C1
- open access
Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform
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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
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High-temperature time-dependent gate breakdown of p-GaN HEMTs
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Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy
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Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology
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ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric
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Reliability of p-GaN gate HEMTs in reverse conduction
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Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs
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- Journal Article
- A1
- open access
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs