Ghent University Academic Bibliography

Your filters: cql: author="De Koninck, Yannick" or (type any "bookEditor issueEditor" and editor="De Koninck, Yannick")

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Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon

Andualem Ali Yimam (UGent) , Davide Colucci (UGent) , Charles Caer, Didit Yudistira, Yannick DE Koninck, Huseyin Sar, Marina Baryshnikova, Peter Verheyen, Joris VAN Campenhout, Bernardette Kunert, et al.

(2025) OPTICS EXPRESS. 33(2). p.2101-2114
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Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon

Andualem Ali Yimam (UGent) , Davide Colucci (UGent) , Charles Caer, Didit Yudistira, Yannick De Koninck, Huseyin Sar, Marina Baryshnikova, Peter Verheyen, Joris Van Campenhout, Bernardette Kunert, et al.

(2025) OPTICS EXPRESS. 33(13). p.27929-27941
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Extraction of recombination coefficients for electrically injected InGaAs/GaAs monolithic nano-ridge laser diodes integrated on silicon

Andualem Ali Yimam (UGent) , Davide Colucci (UGent) , Charles Caer, Didit Yudistira, Yannick De Koninck, Huseyin Sar, Marina Baryshnikova, Peter Verheyen, Joris Van Campenhout, Bernardette Kunert, et al.

(2025) 2025 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS. In IEEE International Conference on Group IV Photonics
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GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line

Yannick De Koninck, Charles Caer, Didit Yudistira, Marina Baryshnikova, Huseyin Sar, Ping-Yi Hsieh, Cenk Ibrahim Oezdemir, Saroj Kanta Patra, Nadezda Kuznetsova, Davide Colucci (UGent) , et al.

(2025) NATURE. 637(8044).
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Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer

Cenk Ibrahim Özdemir, Yannick De Koninck (UGent) , Saroj Kanta Patra, Marina Baryshnikova, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout and Dries Van Thourhout (UGent)

(2024) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 57(40).
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Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision

Aleksandrs Marinins, Sebastian Hansch, Huseyin Sar, Francois Chancerel, Negin Golshani, Hsiao-Lun Wang, Artemisia Tsiara, David Coenen, Peter Verheyen, Giovanni Capuz, et al.

(2023) IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. 29(3).
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Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering

Davide Colucci (UGent) , Marina Baryshnikova, Yuting Shi, Yves Mols, Muhammad Muneeb (UGent) , Yannick De Koninck (UGent) , Didit Yudistira, Marianna Pantouvaki, Joris Van Campenhout, Robert Langer, et al.

(2022) OPTICS EXPRESS. 30(8). p.13510-13521
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0.3pA dark current and 0.65A/W responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer

Cenk Ibrahim Özdemir, Yannick De Koninck, Didit Yudistira, Nadezda Kuznetsova, Marina Baryshnikova, Dries Van Thourhout (UGent) , 􀀃Bernardette Kunert, Marianna Pantouvaki and Joris Van Campenhout

(2021) 2020 European Conference on Optical Communications (ECOC).
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Constructing III-V nano-ridge photodetectors on silicon

Cenk Ibrahim Özdemir, Dries Van Thourhout (UGent) , Yannick De Koninck, Didit Yudistira, Marina Baryshnikova, Nadezda Kuznetsova, Bernardette Kunert, Marianna Pantouvaki and Joris Van Campenhout

(2021) COMPOUND SEMICONDUCTOR. 27(5). p.46-50
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Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer

Cenk Ibrahim Özdemir, Yannick De Koninck (UGent) , Didit Yudistira, Nadezda Kuznetsova, Marina Baryshnikova, Dries Van Thourhout (UGent) , Bernardette Kunert, Marianna Pantouvaki and Joris Van Campenhout

(2021) JOURNAL OF LIGHTWAVE TECHNOLOGY. 39(16). p.5263-5269

Academic Bibliography

Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon

Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon

Extraction of recombination coefficients for electrically injected InGaAs/GaAs monolithic nano-ridge laser diodes integrated on silicon

GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line

Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer

Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision

Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering

0.3pA dark current and 0.65A/W responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer

Constructing III-V nano-ridge photodetectors on silicon

Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer

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