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Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer
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- Journal Article
- A1
- open access
Wafer-scale hybrid integration of InP DFB lasers on Si photonics by flip-chip bonding with sub-300nm alignment precision
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- Journal Article
- A1
- open access
Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering
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Constructing III-V nano-ridge photodetectors on silicon
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Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer
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- Conference Paper
- P1
- open access
0.3pA dark current and 0.65A/W responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer
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InGaAs nano-ridge laser emitting in the telecom O-band monolithically grown on a 300 mm Si wafer
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- Journal Article
- A1
- open access
Novel adiabatic coupler for III-V nano-ridge laser grown on a Si photonics platform
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Nano-ridge laser monolithically grown on (001) Si
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- PhD Thesis
- open access
Heterogeneously integrated III-V on silicon microlasers based on resonant grating mirrors
(2015)