Show
Sort by
-
ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric
-
Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy
-
Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology
-
Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
-
Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination
-
Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination
-
Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs
-
Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
-
- Journal Article
- A1
- open access
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
-
Au-free AlGaN/GaN power diode on 8-in Si substrate with gated edge termination