Ghent University Academic Bibliography

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Your filters: cql: author="DE GRYSE, Olivier*" or (type exact bookEditor and editor="DE GRYSE, Olivier*")

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- Journal Article
- A1
A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in silicon

Jan Vanhellemont (UGent) , Olivier DE GRYSE and Paul Clauws (UGent)

(2006) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 203(10). p.2341-2346
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- Journal Article
- A1
Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy

Olivier De Gryse, Jan Vanhellemont (UGent) and Paul Clauws (UGent)

(2006) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 9(1-3). p.246-251
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Precipitation and extended defect formation in silicon

Jan Vanhellemont (UGent) , Olivier De Gryse and Paul Clauws (UGent)

(2005) Physica Status Solidi C : Conferences and Critical Reviews. 2(6). p.1958-1962
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- Journal Article
- A1
Critical precipitate size revisited and implications for oxygen precipitation in silicon

Jan Vanhellemont (UGent) , Olivier De Gryse and Paul Clauws (UGent)

(2005) APPLIED PHYSICS LETTERS. 86(22).
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- Journal Article
- A1
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy

Olivier DE GRYSE, Paul Clauws (UGent) , Jan Vanhellemont (UGent) , OI LEBEDEV, J VAN LANDUYT, E SIMOEN and C CLAEYS

(2004) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 151(9).
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- Journal Article
- A1
DLTS studies of high-temperature electron irradiated Cz n-Si

V NEIMASH, M KRAS'KO, A KRAITCHINSKII, V VOYTOVYCH, V TISHCHENKO, E SIMOEN, JM RAFI, C CLAEYS, Jorg Versluys, Olivier De Gryse, et al.

(2004) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 201(3). p.509-516
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- Journal Article
- A1
Extended defects in silicon: an old and new story

Jan Vanhellemont (UGent) , Olivier De Gryse and Paul Clauws (UGent)

(2004) GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY. 95-96. p.263-272
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- Journal Article
- A1
Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse and Paul Clauws (UGent)

(2003) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 150(9).
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- Journal Article
- A1
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

Olivier De Gryse, Jan Vanhellemont (UGent) , Paul Clauws (UGent) , O LEBEDEV, J VAN LANDUYT, E SIMOEN and C CLAEYS

(2003) PHYSICA B-CONDENSED MATTER. 340. p.1013-1017
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- Journal Article
- A1
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

E SIMEON, C CLAEYS, R LOO, Olivier De Gryse, Paul Clauws (UGent) , R JOB, AG ULYASHIN and W FAHRNER

(2003) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 102(1-3). p.207-212

Academic Bibliography

A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in silicon

Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy

Precipitation and extended defect formation in silicon

Critical precipitate size revisited and implications for oxygen precipitation in silicon

Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy

DLTS studies of high-temperature electron irradiated Cz n-Si

Extended defects in silicon: an old and new story

Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

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