Ghent University Academic Bibliography

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- Journal Article
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Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation

Abderrahim Tahiat, Bogdan Cretu, Anabela Veloso and Eddy Simoen (UGent)

(2026) SOLID-STATE ELECTRONICS. 231.
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- Conference Paper
- C3
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Exploration and insights into vertical nanowire/sheet FETs for ultimate scaled circuits/systems

Anabela Veloso, Bjorn Vermeersch, Abderrahim Tahiat, Philippe Matagne, Adrian Chasin, Barry O'Sullivan, Ruben Asanovski, Bogdan Cretu, Eddy Simoen (UGent) , Roger Loo (UGent) , et al.

(2025) 2025 International Conference on Solid State Devices and Materials, Abstracts.
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Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs

Bogdan Cretu, Abderrahim Tahiat, Anabela Veloso and Eddy Simoen (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5860-5866
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Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs

Bogdan Cretu, Anabela Veloso and Eddy Simoen (UGent)

(2023) IEEE TRANSACTIONS ON ELECTRON DEVICES. 70(1). p.254-260
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Performance perspective of Gate-All-Around double nanosheet CMOS beyond high-speed logic applications

Eddy Simoen (UGent) , Carlos H.S. Coelho, Vanessa C.P. da Silva, João A. Martino, Paula Ghedini Der Agopian, Alberto Oliveira, Bogdan Cretu and Anabela Veloso

(2022) JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS. 17(2).
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Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets

Bogdan Cretu, Anabela Veloso and Eddy Simoen (UGent)

(2021) 2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). In International Conference on Ultimate Integration on Silicon
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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Bogdan Cretu, Beya Nafaa, Eddy Simoen (UGent) , Geert Hellings, Dimitri Linten and Cor Claeys

(2020) ECS Transactions. 97(5). p.45-51
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Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Eddy Simoen (UGent) , Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Jun Luo, Chao Zhao and Cor Claeys

(2016) Gettering and defect engineering in semiconductor technology XVI. In Solid State Phenomena 242. p.449-458
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Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs

Eddy Simoen (UGent) , Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Sara dos Santos, Jun Luo, Chao Zhao, Joao Antonio Martino, et al.

(2015) Physica Status Solidi C-Current Topics in Solid State Physics. 12(3). p.292-298

Academic Bibliography

Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation

Exploration and insights into vertical nanowire/sheet FETs for ultimate scaled circuits/systems

Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs

Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs

Performance perspective of Gate-All-Around double nanosheet CMOS beyond high-speed logic applications

Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets

Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs

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