Show
Sort by
-
Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging
-
Electrical activity of extended defects in III-V semiconductors
-
Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior
-
Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
-
- Conference Paper
- P1
- open access
Deep level investigation of InGaAs on InP layer
-
Defect engineering for shallow n-type junctions in germanium : facts and fiction
-
TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs