Ghent University Academic Bibliography

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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

Danghui Wang, Tianhan Xu, Eddy Simoen (UGent) , Bogdan Govoreanu, Cor Claeys and Yang Zhang

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(3). p.948-953
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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Bogdan Cretu, Beya Nafaa, Eddy Simoen (UGent) , Geert Hellings, Dimitri Linten and Cor Claeys

(2020) ECS Transactions. 97(5). p.45-51
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Device performance as a metrology tool to detect metals in silicon

Cor Claeys and Eddy Simoen (UGent)

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
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Electrical activity of extended defects in III-V semiconductors

Eddy Simoen (UGent) , P-C Hsu, Yves Mols, Bernardette Kunert, Robert Langer, Clement Merckling, AliReza Alian, Niamh Waldron, Geert Eneman, Nadine Collaert, et al.

(2019) ECS Transactions. 92(4). p.21-31
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Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior

Liang He, Pan Zhao, Jiahao Liu, Yahui Su, Hua Chen, Xiaofei Jia, Hiroaki Arimura, Jerome Mitard, Liesbet Witters, Naoto Horiguchi, et al.

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(2). p.1050-1056
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On the low-frequency noise of high-kappa gate stacks : what did we learn?

Eddy Simoen (UGent) , Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Naoto Horiguchi and Cor Claeys

(2018) 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT). p.97-100
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- Conference Paper
- P1
- open access
Deep level investigation of InGaAs on InP layer

Chong Wang, Eddy Simoen (UGent) , Alian AliReza, Sonja Sioncke, Nadine Collaert, Cor Claeys and Wei Li

(2017) 2017 China semiconductor technology international conference (CSTIC 2017).
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- Miscellaneous
Jan Vanhellemont : 35 years of materials research in microelectronics

Gudrun Kissinger, Eddy Simoen (UGent) , Cor Claeys, Paul Clauws (UGent) , Piotr Śpiewak, Koji Sueoka and Deren Yang

(2016) Physica Status Solidi C-Current Topics in Solid State Physics. 13(10-12). p.706-711
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Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Eddy Simoen (UGent) , Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Jun Luo, Chao Zhao and Cor Claeys

(2016) Solid State Phenomena. 242. p.449-458
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Distinction between silicon and oxide traps using single-trap spectroscopy

Wen Fang, Eddy Simoen (UGent) , Marc Aoulaiche, Jun Luo, Chao Zhao and Cor Claeys

(2015) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 212(3). p.512-517

Academic Bibliography

Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Device performance as a metrology tool to detect metals in silicon

Electrical activity of extended defects in III-V semiconductors

Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior

On the low-frequency noise of high-kappa gate stacks : what did we learn?

Deep level investigation of InGaAs on InP layer

Jan Vanhellemont : 35 years of materials research in microelectronics

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Distinction between silicon and oxide traps using single-trap spectroscopy

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