Ghent University Academic Bibliography

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- Journal Article
3D Backside Integration of FinFETs: Is There an Impact on LF Noise?

Eddy Simoen (UGent) , Anne Jourdain, Cor Claeys and Anabela Veloso

(2023) Solid-State Electronics.
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- Journal Article
- A1
- open access
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Eddy Simoen (UGent) , Anabela Veloso, Philippe Matagne and Cor Claeys

(2023) SOLID-STATE ELECTRONICS. 200.
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- Journal Article
- A2
- open access
Tunnel-FET evolution and applications for analog circuits

Paula Ghedini Der Agopian, Joao A. Martino, Eddy Simoen (UGent) , Rita Rooyackers and Cor Claeys

(2022) JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS. 17(2).
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The low-frequency noise behavior of advanced logic and memory devices

Eddy Simoen (UGent) , Romain Ritzenthaler, Hans Mertens, Eugenio Dentoni Litta, Naoto Horiguchi, Adrian Vaisman, Nouredine Rassoul, Gouri Sankar Kar and Cor Claeys

(2022) 2022 China Semiconductor Technology International Conference (CSTIC).
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Frontiers in low-frequency noise research in advanced semiconductor devices

Eddy Simoen (UGent) , Anabela Veloso, Barry O'Sullivan, Kenichiro Takakura and Cor Claeys

(2021) 2021 China Semiconductor Technology International Conference (CSTIC).
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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

Danghui Wang, Tianhan Xu, Eddy Simoen (UGent) , Bogdan Govoreanu, Cor Claeys and Yang Zhang

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(3). p.948-953
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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Bogdan Cretu, Beya Nafaa, Eddy Simoen (UGent) , Geert Hellings, Dimitri Linten and Cor Claeys

(2020) ECS Transactions. 97(5). p.45-51
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Device performance as a metrology tool to detect metals in silicon

Cor Claeys and Eddy Simoen (UGent)

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
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Electrical activity of extended defects in III-V semiconductors

Eddy Simoen (UGent) , P-C Hsu, Yves Mols, Bernardette Kunert, Robert Langer, Clement Merckling, AliReza Alian, Niamh Waldron, Geert Eneman, Nadine Collaert, et al.

(2019) ECS Transactions. 92(4). p.21-31
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Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior

Liang He, Pan Zhao, Jiahao Liu, Yahui Su, Hua Chen, Xiaofei Jia, Hiroaki Arimura, Jerome Mitard, Liesbet Witters, Naoto Horiguchi, et al.

(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(2). p.1050-1056

Academic Bibliography

3D Backside Integration of FinFETs: Is There an Impact on LF Noise?

Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Tunnel-FET evolution and applications for analog circuits

The low-frequency noise behavior of advanced logic and memory devices

Frontiers in low-frequency noise research in advanced semiconductor devices

Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Device performance as a metrology tool to detect metals in silicon

Electrical activity of extended defects in III-V semiconductors

Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior

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