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3D Backside Integration of FinFETs: Is There an Impact on LF Noise?
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- Journal Article
- A1
- open access
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs
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- Journal Article
- A2
- open access
Tunnel-FET evolution and applications for analog circuits
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The low-frequency noise behavior of advanced logic and memory devices
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Frontiers in low-frequency noise research in advanced semiconductor devices
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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks
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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities
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Device performance as a metrology tool to detect metals in silicon
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Electrical activity of extended defects in III-V semiconductors
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Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior