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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks
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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities
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Device performance as a metrology tool to detect metals in silicon
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Electrical activity of extended defects in III-V semiconductors
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Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior
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On the low-frequency noise of high-kappa gate stacks : what did we learn?
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- Conference Paper
- P1
- open access
Deep level investigation of InGaAs on InP layer
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Jan Vanhellemont : 35 years of materials research in microelectronics
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Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices
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Distinction between silicon and oxide traps using single-trap spectroscopy