Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions News feed Embed this list Save this search Mark all Export Your filters: cql: author="CHENG, TS" or (type exact bookEditor and editor="CHENG, TS") Mark journalArticle A1 X-ray studies of group III-nitride quantum wells with high quality interfaces. PF FEWSTER, NL ANDREW, OH HUGHES, C STADDON, CT FOXON, A BELL, TS CHENG, T WANG, S SAKAI, K JACOBS, et al. (2000) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 18(4) 2300-2303). Mark conference C1 Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy. B HAMILTON, K FERHAH, J DAVIDSON, P DAWSON, E WHITTAKER, TS CHENG, CT FOXON and Zahia Bougrioua (1999) Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. p.131-132 Mark journalArticle A1 Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD. JJ HARRIS, KJ LEE, I HARRISON, LB FLANNERY, D KORAKAKIS, TS CHENG, CT FOXON, Zahia Bougrioua, Ingrid Moerman (UGent) , Wim Van Der Stricht, et al. (1999) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 176(1). p.363-367 Mark conference C1 Investigation into the transport properties of MBE grown GaN BJ ANSELL, I HARRISON, CT FOXON, TS CHENG, JJ HARRIS, C MAVROIDIS, Zahia Bougrioua and Ingrid Moerman (UGent) The Fourth European GaN Workshop (EGW-4), 2-5 July 2000, Nottingham, United Kingdom, pp. P22..