Ghent University Academic Bibliography

Your filters: cql: author="Bougrioua, Zahia" or (type any "bookEditor issueEditor" and editor="Bougrioua, Zahia")

Add to list
Evidence of an impurity band at an n-GaN/sapphire interface

C Mavroidis, JJ Harris, RB Jackman, Zahia Bougrioua and Ingrid Moerman (UGent)

(2003) DIAMOND AND RELATED MATERIALS. 12(3-7). p.1127-1132
Add to list
- Journal Article
- A1
Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

A JIMENEZ, Zahia Bougrioua, JM TIRADO, AF BRANA, E CALLEJA, E MUNOZ and Ingrid Moerman (UGent)

(2003) APPLIED PHYSICS LETTERS. 82(26). p.4827-4829
Add to list
- Journal Article
- A1
AlGaN/GaN HEMTS: material, processing, and characterization

F CALLE, T PALACIOS, E MONROY, J GRAJAL, M VERDU, Zahia Bougrioua and Ingrid Moerman (UGent)

(2003) JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 14(5-7). p.271-277
Add to list
- Journal Article
- A1
Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures

Zahia Bougrioua, Ingrid Moerman (UGent) , L NISTOR, B VAN DAELE, E MONROY, T PALACIOS, F CALLE and M LEROUX

(2003) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 195(1). p.93-100
Add to list
- Journal Article
- A1
Free carrier mobility in AlGaN/GaN quantum wells

JL Farvacque, Zahia Bougrioua, F Carosella and Ingrid Moerman (UGent)

(2002) JOURNAL OF PHYSICS-CONDENSED MATTER. 14(48). p.13319-13328
Add to list
- Journal Article
- A1
Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by Electron Beam Induced Current.

C GRAZZI, M ALBRECHT, HP STRUNK, Zahia Bougrioua and Ingrid Moerman (UGent)

(2002) GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY. 82-84. p.807-812
Add to list
- Journal Article
- A1
Relation between microstructure and 2DEG properties of AlGaN/GaN structures.

B VAN DAELE, G VAN TENDELOO, M GERMAIN, Monique Leys, Zahia Bougrioua and Ingrid Moerman (UGent)

(2002) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 234(3). p.830-834
Add to list
- Journal Article
- A1
Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers.

C MAVROIDIS, JJ HARRIS, RB JACKMAN, I HARRISON, BJ ANSELL, Zahia Bougrioua and Ingrid Moerman (UGent)

(2002) JOURNAL OF APPLIED PHYSICS. 91(12). p.9835-9840
Add to list
- Journal Article
- A1
Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.3Ga0.69N.

E MONROY, F CALLE, R RANCHAL, T PALACIOS, M VERDU, FJ SANCHEZ, MT MONTOJO, M EICKHOFF, F OMNES, Zahia Bougrioua, et al.

(2002) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 17(9) L47-L54).
Add to list
- Journal Article
- A1
Influence of process technology on DC-performance of GaN-based HFETs.

D MISTELE, T ROTTER, Zahia Bougrioua, M MARSO, H ROLL, H KLAUSING, F FEDLER, O SEMCHINOVA, J ADERHOLD, Ingrid Moerman (UGent) , et al.

(2002) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 194(2). p.452-455

Academic Bibliography

Evidence of an impurity band at an n-GaN/sapphire interface

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

AlGaN/GaN HEMTS: material, processing, and characterization

Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures

Free carrier mobility in AlGaN/GaN quantum wells

Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by Electron Beam Induced Current.

Relation between microstructure and 2DEG properties of AlGaN/GaN structures.

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers.

Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.3Ga0.69N.

Influence of process technology on DC-performance of GaN-based HFETs.

Contents

Support

Contact